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Structure and formation method of fin-like field effect transistor

A technology of semiconductor and protective layer, applied in the field of structure and formation of fin field effect transistor, can solve the problems of reduced component size and difficult implementation of manufacturing process, etc.

Active Publication Date: 2016-01-27
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, manufacturing processes continue to become more difficult to implement as component sizes continue to decrease
Therefore, it is challenging to form reliable semiconductor devices including FinFETs

Method used

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  • Structure and formation method of fin-like field effect transistor
  • Structure and formation method of fin-like field effect transistor
  • Structure and formation method of fin-like field effect transistor

Examples

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Embodiment Construction

[0033] The invention provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are of course merely examples and are not intended to be limiting. For example, the following description of a first component being formed over or on a second component may include embodiments in which the first and second components are formed in direct contact, and may also include embodiments in which an additional component is formed between the first and second components. Embodiments of the components such that the first and second components are not in direct contact. Furthermore, the present invention may repeat reference numerals and / or letters in each example. This repetition is for brevity and clarity and does not in itself dictate a relationship between the various embodiments and / or structures described.

[0034] In...

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PUM

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Abstract

A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source / drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source / drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source / drain structure.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Application No. 62 / 011,386, filed June 12, 2014, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to structures and methods of forming fin field effect transistors. Background technique [0004] The semiconductor integrated circuit (IC) industry has experienced rapid development. Continuing advances in semiconductor manufacturing processes have resulted in semiconductor devices having finer features and / or higher levels of integration. Functional density (ie, the number of interconnected devices per chip area) has increased dramatically while feature size (ie, the smallest component that can be created using a fabrication process) has decreased. Often this scaling down process benefits by increasing production efficiency and reducing associated costs. [0005] Despite breakthrough advances in m...

Claims

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Application Information

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IPC IPC(8): H01L27/088H01L29/78H01L21/8234
CPCH01L21/823814H01L21/02532H01L21/823821H01L27/0924H01L29/0847H01L29/161H01L29/165H01L29/24H01L29/267H01L29/66636H01L29/66795H01L29/7848H01L29/785H01L29/7851
Inventor 张简旭珂林子凯郑志成
Owner TAIWAN SEMICON MFG CO LTD