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A kind of preparation method of octahedral snte nanocrystal with triangle as basic unit

A basic unit, octahedral technology, applied in the field of preparation of octahedral SnTe nanocrystals, can solve problems such as difficulty in preparing regular polyhedra and differences in topological properties, and achieve the effects of easy control and simple preparation method.

Active Publication Date: 2018-01-23
SHANDONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high surface free energy of the {111} crystal plane family, most of the nanowires, nanosheets, and nanocrystals formed in the existing literature reports are {110} and {100} crystal plane families exposed on the crystal surface, exposing the crystal plane It determines its morphology to be a polyhedron, and the basic geometric surface is mostly hexagonal or quadrilateral. It is difficult to prepare a regular polyhedron whose basic geometric surface is triangular, and the different crystal planes of the surface determine the difference in its topological properties.

Method used

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  • A kind of preparation method of octahedral snte nanocrystal with triangle as basic unit
  • A kind of preparation method of octahedral snte nanocrystal with triangle as basic unit
  • A kind of preparation method of octahedral snte nanocrystal with triangle as basic unit

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Experimental program
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Effect test

Embodiment 1

[0026] The preparation method of octahedral SnTe nanocrystal comprises the steps:

[0027] (1) Weigh 0.2561g Te powder and 4g NaOH respectively, put them into the autoclave in turn, and add an appropriate amount of distilled water to make the filling degree of the autoclave 70%.

[0028] (2) Put the reaction kettle into an electric heating constant temperature drying oven and keep it warm at 160°C for 1 hour to fully dissolve the Te powder. After keeping warm, cool to room temperature with the oven and take it out.

[0029] (3) Weigh 0.4516g SnCl 2 2H 2 O, added to the above reaction kettle.

[0030] (4) Put the reaction kettle into an electric heating constant temperature drying oven at 140° C. for 12 hours. Take out the reaction kettle after cooling to room temperature.

[0031] (5) The reaction solution is continuously rinsed and filtered with distilled water until the solution is neutral. The reactant was dried under vacuum at 80° C. for 6 hours and collected.

[00...

Embodiment 2

[0034] The preparation method of octahedral SnTe nanocrystal comprises the steps:

[0035] (1) Weigh 0.2534g Te powder and 4g NaOH respectively, put them into the autoclave in turn, and add an appropriate amount of distilled water to make the filling degree of the autoclave 50%.

[0036] (2) Put the reaction kettle into an electric constant temperature drying oven at 140°C for 1.5h to fully dissolve the Te powder. After keeping warm, cool to room temperature with the oven and take it out.

[0037] (3) Weigh 0.4514g SnCl respectively 2 2H 2 O and 0.5 g NaBH 4 , added to the above reaction kettle in turn.

[0038] (4) Put the reaction kettle into an electric heating constant temperature drying oven at 120° C. for 15 hours. Take out the reaction kettle after cooling to room temperature.

[0039] (5) The reaction solution is continuously rinsed and filtered with distilled water until the solution is neutral. The reactant was dried under vacuum at 70° C. for 7 hours and coll...

Embodiment 3

[0042] The preparation method of octahedral SnTe nanocrystal comprises the steps:

[0043] (1) Weigh 0.2534g Te powder and 4g NaOH respectively, put them into the autoclave one by one, add appropriate amount of distilled water, so that the filling degree of the autoclave is 80%.

[0044] (2) Put the reaction kettle into an electric constant-temperature drying oven at 160°C and keep it warm for 0.8h to fully dissolve the Te powder. After keeping warm, cool to room temperature with the oven and take it out.

[0045] (3) Weigh 0.4524g SnCl respectively 2 2H 2 O and 0.5 g NaBH 4 , added to the above reaction kettle in turn.

[0046] (4) Put the reaction kettle into an electric heating constant temperature drying oven at 80° C. for 15 hours. Take out the reaction kettle after cooling to room temperature.

[0047] (5) The reaction solution is continuously rinsed and filtered with distilled water until the solution is neutral. The reactant was dried under vacuum at 90° C. for ...

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Abstract

The invention discloses a method for preparing an octahedral SnTe nanocrystal with a triangle as a basic unit, which comprises the following steps: 1) After mixing Te powder and NaOH solution, add it to a reaction kettle so that the filling degree of the reaction kettle is 50- 80%; the Te powder is completely dissolved under the action of heat and pressure to obtain a mixed solution; 2) after cooling the mixed solution in the reactor obtained in step 1), add SnCl2 2H2O and NaBH to the reactor successively, and seal the reactor Carrying out heating reaction; 3) cooling the reacted solution to room temperature with the furnace, continuously washing the reaction product with distilled water until the washing liquid is neutral, and collecting the reaction product after vacuum drying. The invention prepares octahedral SnTe pure phase constructed by triangles. The preparation method of this process is simple, the SnTe pure phase is obtained, and the yield is 70-80%. At the same time, the process does not involve organic solvents, is pollution-free, and can effectively control the crystal surface construction state.

Description

technical field [0001] The invention specifically relates to a method for preparing octahedral SnTe nanocrystals with triangles as basic units. Background technique [0002] Tin telluride is a typical IV-VI narrow-band semiconductor material. It has distinctive thermodynamic and electronic properties. It is also a mirror-symmetric topological crystal insulator. Various physical properties of its surface states have been studied in the world. The experimental verification of the author. Tin telluride is widely used in the manufacture of spintronic devices, phase change memory materials, solar cells, thermoelectric converters and infrared devices. [0003] Topological insulators are different from well-known metals or insulators. They are materials with a topological insulating state. The electronic state in the body is a typical insulator with a non-zero band gap, but the surface presents a metallic state (there is a crossing energy gap at the Fermi surface. Dirac-type elec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04
CPCC01B19/007C01P2002/72C01P2004/03C01P2004/30C01P2004/61
Inventor 刘洪权楚志颖宋强苏强袁存辉薛浩谷亦杰崔洪芝
Owner SHANDONG UNIV OF SCI & TECH
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