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Preparation method of octahedral SnTe nanocrystals with triangle as basic unit

A basic unit, octahedral technology, applied in the field of preparation of octahedral SnTe nanocrystals, can solve problems such as differences in topological properties, difficulty in preparing regular polyhedra, etc., and achieve the effect of a simple preparation method

Active Publication Date: 2016-08-03
SHANDONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high surface free energy of the {111} crystal plane family, most of the nanowires, nanosheets, and nanocrystals formed in the existing literature reports are {110} and {100} crystal plane families exposed on the crystal surface, exposing the crystal plane It determines its morphology to be a polyhedron, and the basic geometric surface is mostly hexagonal or quadrilateral. It is difficult to prepare a regular polyhedron whose basic geometric surface is triangular, and the different crystal planes of the surface determine the difference in its topological properties.

Method used

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  • Preparation method of octahedral SnTe nanocrystals with triangle as basic unit
  • Preparation method of octahedral SnTe nanocrystals with triangle as basic unit
  • Preparation method of octahedral SnTe nanocrystals with triangle as basic unit

Examples

Experimental program
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Effect test

Embodiment 1

[0026] The preparation method of octahedral SnTe nanocrystal comprises the steps:

[0027] (1) Weigh 0.2561g Te powder and 4g NaOH respectively, put them into a high-pressure reactor in turn, and add an appropriate amount of distilled water so that the filling degree of the reactor is 70%.

[0028] (2) Put the reaction kettle into an electric heating constant temperature drying oven and keep it warm at 160°C for 1 hour to fully dissolve the Te powder. After keeping warm, cool to room temperature with the oven and take it out.

[0029] (3) Weigh 0.4516g SnCl 2 2H 2 O, added to the above reaction kettle.

[0030] (4) Put the reaction kettle into an electric heating constant temperature drying oven at 140° C. for 12 hours. Take out the reaction kettle after cooling to room temperature.

[0031] (5) The reaction solution is continuously rinsed and filtered with distilled water until the solution is neutral. The reactant was dried under vacuum at 80° C. for 6 hours and collec...

Embodiment 2

[0034] The preparation method of octahedral SnTe nanocrystal comprises the steps:

[0035] (1) Weigh 0.2534g Te powder and 4g NaOH respectively, put them into the autoclave one by one, add appropriate amount of distilled water, so that the filling degree of the autoclave is 50%.

[0036] (2) Put the reaction kettle into an electric constant temperature drying oven at 140°C for 1.5h to fully dissolve the Te powder. After keeping warm, cool to room temperature with the oven and take it out.

[0037] (3) Weigh 0.4514g SnCl respectively 2 2H 2 O and 0.5 g NaBH 4 , added to the above reaction kettle in turn.

[0038] (4) Put the reaction kettle into an electric heating constant temperature drying oven at 120° C. for 15 hours. Take out the reaction kettle after cooling to room temperature.

[0039] (5) The reaction solution is continuously rinsed and filtered with distilled water until the solution is neutral. The reactant was dried under vacuum at 70° C. for 7 hours and coll...

Embodiment 3

[0042] The preparation method of octahedral SnTe nanocrystal comprises the steps:

[0043] (1) Weigh 0.2534g of Te powder and 4g of NaOH respectively, put them into the autoclave in turn, and add an appropriate amount of distilled water so that the filling degree of the autoclave is 80%.

[0044] (2) Put the reaction kettle into an electric constant-temperature drying oven at 160°C and keep it warm for 0.8h to fully dissolve the Te powder. After keeping warm, cool to room temperature with the oven and take it out.

[0045] (3) Weigh 0.4524g SnCl respectively 2 2H 2 O and 0.5 g NaBH 4 , added to the above reaction kettle in turn.

[0046] (4) Put the reaction kettle into an electric heating constant temperature drying oven at 80° C. for 15 hours. Take out the reaction kettle after cooling to room temperature.

[0047] (5) The reaction solution is continuously rinsed and filtered with distilled water until the solution is neutral. The reactant was dried under vacuum at 90...

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Abstract

The invention discloses a preparation method of octahedral SnTe nanocrystals with a triangle as a basic unit. The preparation method comprises the following steps: 1, mixing Te powder with a NaOH solution, adding the obtained mixture to a reaction kettle, allowing the filling degree of the reaction kettle to be 50-80%, and completely dissolving the Te powder under heating and pressurizing conditions to obtain a mixed solution; 2, cooling the mixed solution in the reaction kettle, obtained in step 1, sequentially adding SnCl2.2H2O and NaBH4 to the reaction kettle, sealing the reaction kettle, and carrying out a heating reaction; and 3, cooling the reacted solution with a furnace to room temperature, continuously flushing the obtained reaction product with distilled water until the obtained flushing solution is neutral, carrying out vacuum drying on the reaction product, and collecting the dried reaction product. An octahedral SnTe pure phase constructed by triangles is prepared in the invention. The preparation method is simple, the SnTe pure phase is obtained, and the output is 70-80%; and the method does not involve an organic solvent, has no pollution, and can effectively regulate the surface construction state of the crystals.

Description

technical field [0001] The invention specifically relates to a method for preparing octahedral SnTe nanocrystals with triangles as basic units. Background technique [0002] Tin telluride is a typical IV-VI narrow-band semiconductor material. It has distinctive thermodynamic and electronic properties. It is also a mirror-symmetric topological crystal insulator. Various physical properties of its surface states have been studied in the world. The experimental verification of the author. Tin telluride is widely used in the manufacture of spintronic devices, phase change memory materials, solar cells, thermoelectric converters and infrared devices. [0003] Topological insulators are different from well-known metals or insulators. They are materials with a topological insulating state. The electronic state in the body is a typical insulator with a non-zero band gap, but the surface presents a metallic state (there is a crossing energy gap at the Fermi surface. Dirac-type elec...

Claims

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Application Information

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IPC IPC(8): C01B19/04
CPCC01B19/007C01P2002/72C01P2004/03C01P2004/30C01P2004/61
Inventor 刘洪权楚志颖宋强苏强袁存辉薛浩谷亦杰崔洪芝
Owner SHANDONG UNIV OF SCI & TECH
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