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Semiconductor light-emitting element and manufacturing method thereof

A technology for light-emitting elements and manufacturing methods, which can be applied to semiconductor devices, electrical components, circuits, etc., and can solve the problems of reduced light-emitting characteristics, reduced efficiency, defects and cracks, etc.

Inactive Publication Date: 2016-10-05
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If such a semiconductor light-emitting element is formed on a silicon substrate with excellent mass productivity, defects and cracks due to differences in lattice constants and thermal expansion coefficients are likely to occur
As a result, the luminous characteristics are degraded, and the efficiency is degraded.

Method used

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  • Semiconductor light-emitting element and manufacturing method thereof
  • Semiconductor light-emitting element and manufacturing method thereof
  • Semiconductor light-emitting element and manufacturing method thereof

Examples

Experimental program
Comparison scheme
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no. 2 Embodiment approach

[0097] This embodiment mode relates to a method of manufacturing a semiconductor light emitting element.

[0098] In this manufacturing method, the first semiconductor layer 10 of the first conductivity type that is provided on the substrate 50, the third semiconductor layer 30 that is provided on the first semiconductor layer 10, and the semiconductor layer that is provided between the third semiconductor layer The surface (fourth surface 15 b ) on the first semiconductor layer 10 side of the layered body 15 of the second conductivity type second semiconductor layer 20 on the upper surface is bonded to the base 70 . The metal layer 75 is used for this bonding. That is, the implementation targets image 3 (d) Processing as described.

[0099] In this manufacturing method, after the bonding, the substrate 50 is removed. That is, the implementation targets image 3 (e) Process described (third step ST3).

[0100] In this manufacturing method, after this removal, the surface...

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PUM

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Abstract

The embodiment of the invention provides a semiconductor light-emitting element capable of increasing efficiency and a manufacturing method thereof. According to one embodiment, The semiconductor light-emitting element includes a substrate, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type between the substrate and the first semiconductor layer, a third semiconductor layer between the first semiconductor layer and the second semiconductor layer, and a metal layer between the substrate and the second semiconductor layer. The substrate has a first surface on a side facing the metal layer and a second surface on a side opposite to the first surface, and the second surface is convex.

Description

[0001] [Related Application] [0002] This application enjoys the priority of Japanese Patent Application No. 2015-51703 (filing date: March 16, 2015) as the basic application. This application incorporates all the contents of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to a semiconductor light emitting element and a manufacturing method thereof. Background technique [0004] Semiconductor light-emitting elements such as light-emitting diodes (LEDs) are used, for example, in display devices or lighting. If such a semiconductor light-emitting element is formed on a silicon substrate with excellent mass productivity, defects and cracks due to differences in lattice constants, thermal expansion coefficients, and the like are likely to occur. As a result, light emission characteristics are degraded, and efficiency is degraded. Contents of the invention [0005] Embodiments of the present ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/20
CPCH01L33/0093H01L33/20H01L33/007H01L33/32
Inventor 黄钟日胜野弘
Owner KK TOSHIBA