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semiconductor device

A semiconductor and conductive technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as increased breakdown, and achieve the effect of improving reverse recovery tolerance

Active Publication Date: 2021-01-12
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the reverse recovery di / dt related to the reverse recovery tolerance tends to increase year by year, and there is concern about current concentration at the periphery of the ohmic connection portion where the anode electrode and the anode region are ohmicly connected. It is important to improve the reverse recovery tolerance because breakdown and breakdown are increased due to electric field concentration at the outer curvature of the side surface of the anode region.

Method used

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no. 1 approach

[0031] "Structure of Semiconductor Devices"

[0032] In the semiconductor device 31 according to the first embodiment of the present invention, as image 3 As shown, the first conductivity type (n - type) drift layer 1. according to figure 1 and figure 2 As can be seen from the top view, the drift layer 1 has: an element formation region 21 located in the center; and an edge termination region (voltage-resistant region) 22 provided to surround the element formation region 21 . A diode element 20 for power is formed in the element formation region 21 . In the edge terminal area 22, such as image 3 As shown, for example, three lines of the second conductivity type (p + Type) Field Limiting Ring (FLR: Field Limiting Ring) area 6 j 、6 j+1 、6 j+2 , but not limited to image 3 construction shown.

[0033] Such as image 3 As shown, the semiconductor device 31 according to the first embodiment of the present invention includes: a drift layer 1; and an anode region 3 of...

no. 2 approach

[0072] The structure of the semiconductor device 32 according to the second embodiment of the present invention is substantially the same as that of the semiconductor device 31 according to the above-mentioned first embodiment, but the arrangement of the Schottky electrodes is different.

[0073] Such as Figure 12 As shown, the semiconductor device 32 according to the second embodiment of the present invention includes: a drift layer 1; a p-type anode region 3 selectively provided on the upper part of the drift layer 1; and an insulating film 10 provided on the drift layer 1. above layer 1. In addition, the semiconductor device 32 according to the second embodiment includes the anode electrode 12 having the ohmic connection portion 12a and the lead-out portion 12b, and the ohmic connection portion 12a is connected to the anode region through the contact hole 11 penetrating the insulating film 10. 3 to perform ohmic connection, and the lead-out portion 12b is led out from the...

no. 3 approach

[0085] The structure of the semiconductor device 33 according to the third embodiment of the present invention is substantially the same as that of the semiconductor device 32 according to the second embodiment, but differs in the semiconductor region that forms the Schottky junction with the Schottky electrode.

[0086] Such as Figure 13 As shown, the semiconductor device 33 according to the third embodiment of the present invention includes: a drift layer 1; a p-type anode region 3A selectively provided on the upper surface side of the drift layer 1; and an insulating film 10, It is arranged on the drift layer 1 .

[0087] Additionally, if Figure 13 As shown, the semiconductor device 33 according to the third embodiment includes an anode electrode 12 having an ohmic connection portion 12a and a lead-out portion 12b. The region 3A is ohmic-connected, and the lead-out portion 12b is led out from the ohmic-connection portion 12a to the periphery of the ohmic-connection port...

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Abstract

A semiconductor device capable of improving the reverse recovery withstand capacity of a diode element. The semiconductor device has a drift layer (1) of the first conductivity type; an anode region (3) of the second conductivity type is arranged on the upper part of the drift layer (1); an insulating film (10) is arranged on the drift layer (1) above; an anode electrode (12) having an ohmic connection portion (12a) for ohmic connection with the anode region (3) through a contact hole (11) penetrating the insulating film (10); and a Schottky electrode (8 ), which makes a Schottky junction with the peripheral portion of the anode region (3).

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, to a technique effectively applied to a semiconductor device having a diode element. Background technique [0002] In a power diode element used in anti-parallel connection with a switching element such as an insulated gate bipolar transistor (IGBT) or an insulated gate field effect transistor (IGFET) such as a MOSFET, if the recovery state is from the forward state to the reverse state If the amount of change over time (di / dt) of the current during transition is too large, breakdown may occur depending on the usage conditions. Therefore, in general, a diode element for power is required to have a large value of di / dt when reaching a breakdown state, that is, a breakdown tolerance during reverse recovery (hereinafter referred to as "reverse recovery tolerance"). Big. [0003] However, the reverse recovery di / dt related to the reverse recovery tolerance tends to increase y...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06
CPCH01L29/0603H01L29/0684H01L29/8613H01L29/402H01L29/0619
Inventor 小川恵理中川明夫
Owner FUJI ELECTRIC CO LTD
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