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Semiconductor device

一种半导体、导电型的技术，应用在半导体器件、半导体/固态器件制造、电气元件等方向，能够解决增大等问题，达到反向恢复耐量提高的效果

Active Publication Date: 2017-03-08
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] However, the reverse recovery di / dt associated with the required reverse recovery tolerance tends to increase year by year

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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Embodiment Construction

[0022] Hereinafter, a semiconductor device according to an embodiment of the present invention will be described in detail with reference to the drawings. In this specification and the drawings, in the layers and regions marked with n or p, respectively, it means that electrons or holes are the majority carriers of the layers and regions. In addition, + and - appended to n or p indicate a semiconductor region having a relatively high or relatively low doping concentration compared to a semiconductor region not appended with + and -, respectively.

[0023] In addition, in the following description of one embodiment and the drawings, the same symbols are assigned to the same structures, and overlapping descriptions will be omitted. In addition, the drawings described in one embodiment are not drawn with exact scales or dimensional ratios for ease of viewing or understanding. The present invention is not limited to the description of one embodiment described below unless the gis...

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PUM

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Abstract

To further improve the inverse recovery resistance of a diode element. The present invention is provided with: a drift layer (1) of a first conductivity type; an anode region (3) of a second conductivity type, provided on the drift layer (1); a pull-out region (4) of the second conductivity type, provided in contact with the anode region (3) at a position surrounding the anode region (3); and a field-limiting ring region (6j) of the second conductivity type, provided on the drift layer (1) so as to be set apart from the pull-out region (4) at a position surrounding the pull-out region (4). The pull-out region (4) is configured so as to be deeper than the anode region (3) and the field-limiting ring region (6j).

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, to a technique effectively applied to a semiconductor device having a diode element. Background technique [0002] In power diode elements used in anti-parallel connection with switching elements such as IGBTs and MOSFETs, if the amount of change over time (di / dt) of the current at the time of recovery from the forward state to the reverse state is too large, Otherwise, breakdown may occur depending on the conditions of use. Therefore, in general, a diode element for electric power is required to have a large value of di / dt at the time of breakdown, that is, a large reverse recovery capacity. [0003] Patent Document 1 discloses a technique of providing an extraction region outside the anode region, the extraction region being in contact with the anode region, and having a depth deeper than that of the anode region, thereby making the outer curvature portion (outer curved ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L29/868
CPCH01L21/26513H01L29/404H01L29/8611H01L29/0692H01L29/0615H01L29/0619H01L29/861
Inventor 掛布光泰
Owner FUJI ELECTRIC CO LTD
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