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Multi-electrode energy integral type X-ray energy spectrum detector

An X-ray and multi-electrode technology, applied in the field of detectors, can solve the problem that the count rate cannot meet the actual clinical needs, achieve the effect of reducing scanning time and radiation dose, and improving resolution

Pending Publication Date: 2017-03-15
TIANJIN UNIV
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Problems solved by technology

[0004] Photon counting detectors have many errors such as photocurrent stacking and inter-electrode charge sharing, and the counting rate cannot meet the actual clinical needs

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  • Multi-electrode energy integral type X-ray energy spectrum detector
  • Multi-electrode energy integral type X-ray energy spectrum detector

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specific example

[0033] The present invention is further illustrated by examples below, but the present invention is not limited to the scope of the examples, and simple changes made by those of ordinary skill in the art according to the concept of the present invention should be within the scope of the present invention. Inside. Specific examples are as follows:

[0034]For a single detector pixel unit, taking the medical ray energy spectrum 10Kev-100Kev to be detected as an example, it is proposed to select silicon semiconductor crystal as the substrate material, and perform P-type and N-type doping respectively according to the present invention. Both are 10 16 / cm 3 , the thickness of the doped region (T direction) is 0.005cm, the total thickness of the semiconductor crystal is 0.05cm, and the thickness of the intrinsic semiconductor region is 0.04cm. In order to fully absorb photons with an energy of 100Kev, the length of the semiconductor crystal (L direction) is set The width of the ...

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Abstract

A multi-electrode energy integral type X-ray energy spectrum detector is provided; one side surface of an intrinsic semiconductor sensitive zone is provided with a P-type zone through heavy doping, and an N-type zone is formed on the other side surface through heavy doping; the surface, far away from one side of the intrinsic semiconductor sensitive zone, of the P-type zone is provided with a backside electrode; the intrinsic semiconductor sensitive zone and the N-type zone are isolated by shallow trenches so as to form a structure having more than 2 pixel units; the surface, far away from one side of the intrinsic semiconductor sensitive zone, of the N-type zone of each pixel unit is provided with a first forward electrode, a second forward electrode and a third forward electrode, wherein the lengths of said electrodes gradually increase in sequence; the forward electrodes of each pixel unit are commonly connected with an integrated circuit processor of the pixel unit respectively through a shaping filter and a charge integrator in sequence; the top end surface of each pixel unit forms an X-ray plane of incidence. The multi-electrode energy integral type X-ray energy spectrum detector can reduce the scanning time and ray dosage, and can improve time and space resolutions.

Description

technical field [0001] The invention relates to a detector. In particular, it relates to a multi-electrode energy-integrating X-ray energy spectrum detector for medical X-ray energy spectrum detection. Background technique [0002] Spectral CT (Computed Tomography, computerized tomography) mainly uses the difference in absorption of X-ray photons of different energies by human tissue to reconstruct images, which can achieve more accurate material separation and identification. A high-precision energy-sensitive X-ray detector is a key part of spectral CT. The multi-electrode silicon strip-shaped single photon counting detector is a relatively common direct X-ray detector at present. The positive electrodes arranged in sequence mainly realize the collection of photogenerated charges generated by the direct interaction between a single photon in the adjacent range and the Si semiconductor. , the detector distinguishes the energy of a single incident photon by detecting the he...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): A61B6/00
CPCA61B6/4208
Inventor 史再峰孟庆振高阳谢向桅王晶波
Owner TIANJIN UNIV
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