A Method for Optimizing the Electrical Transport Properties of Ultra-Thin Lanthanum Nickel Oxide Thin Films
An optimization method, the technology of lanthanum nickelate, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of unstable performance, high resistivity of ultra-thin lanthanum nickelate film, and achieve a wide range of applications , Conducive to practicality and wide application prospects
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Embodiment 1
[0044] SrTiO 3 (001) The substrate was ultrasonicated for 10 min in absolute ethanol (content 99.7%) and deionized water (conductivity 0.1 us / cm), and the above operation was repeated twice. Soak the cleaned substrate in 10 mol / L ammonium fluoride aqueous solution for 30 s, then put it into deionized water and ultrasonically clean it for 30 s; then put the substrate into a crucible with a cover and send it into a tubular annealing furnace for After annealing treatment, the temperature was raised to 1050 °C for 2 h, and then cooled down naturally after holding for 2 h to obtain the treated TiO with 100 nm 2 Step width of the substrate.
[0045] Place the processed substrate in the deposition chamber of the pulsed laser deposition equipment, set the distance between the target and the substrate to be 4.5 cm, adjust the energy of the pulsed laser and the position of the focusing mirror to ensure the energy of the laser bombarding the target Density is 1J / cm 2 , the pulsed las...
Embodiment 2
[0048] SrTiO 3 (001) The substrate was ultrasonicated for 10 min in absolute ethanol (content 99.7%) and deionized water (conductivity 0.1 us / cm), and the above operation was repeated twice. Soak the cleaned substrate in 10 mol / L ammonium fluoride aqueous solution for 30 s, then put it into deionized water and ultrasonically clean it for 30 s; then put the substrate into a crucible with a cover and send it into a tubular annealing furnace for After annealing treatment, the temperature was raised to 1050 °C for 2 h, and then cooled down naturally after holding for 2 h to obtain the treated TiO with 100 nm 2 Step width of the substrate.
[0049] Place the processed substrate in the deposition chamber of the pulsed laser deposition equipment, set the distance between the target and the substrate to be 4.5 cm, adjust the energy of the pulsed laser and the position of the focusing mirror to ensure the energy of the laser bombarding the target Density is 1J / cm 2 , the pulsed las...
Embodiment 3
[0052] SrTiO 3 (001) The substrate was ultrasonicated for 10 min in absolute ethanol (content 99.7%) and deionized water (conductivity 0.1 us / cm), and the above operation was repeated twice. Soak the cleaned substrate in 10 mol / L ammonium fluoride aqueous solution for 30 s, then put it into deionized water and ultrasonically clean it for 30 s; then put the substrate into a crucible with a cover and send it into a tubular annealing furnace for After annealing treatment, the temperature was raised to 1050 °C for 2 h, and then cooled down naturally after holding for 2 h to obtain the treated TiO with 100 nm 2 Step width of the substrate.
[0053] Place the processed substrate in the deposition chamber of the pulsed laser deposition equipment, set the distance between the target and the substrate to be 4.5 cm, adjust the energy of the pulsed laser and the position of the focusing mirror to ensure the energy of the laser bombarding the target Density is 1J / cm 2 , the pulsed las...
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