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A Durability Test Method

A test method and durability technology, applied in the storage field, can solve problems such as the inability to fully evaluate user usage, and achieve the effect of ensuring reliability verification and integrity.

Active Publication Date: 2020-08-21
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the block and sector modes are most used by users, and the current evaluation method cannot fully evaluate user usage

Method used

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Experimental program
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Embodiment Construction

[0032] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0033] In a preferred embodiment, a durability test method is proposed, which is applied to a flash memory; the flash memory may include a chip, the chip includes a plurality of blocks, and each block includes a plurality of sectors; wherein, the reliability test method Can include:

[0034] performing a first erasing and writing operation a first predetermined number of times;

[0035] performing a second erase and write operation a second predetermined number of times; and

[0036] Endurance evaluation of flash memory based on test results of all erase operations;

[0037] Such as figure 2 As shown, the first erase operation may include:

[0038] Step a1, take any block in the chip as the current block, and perform a sector erase operation on each sector in the current block;

[0039] Step a2, perform a block erase operation on other blocks in t...

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PUM

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Abstract

The present invention relates to the field of storage technology, in particular to a durability test method applied to a flash memory; the flash memory includes a chip, the chip includes a plurality of blocks, and each block includes a plurality of sectors; wherein, the The reliability testing method includes: performing a first erasing and writing operation for a first predetermined number of times; performing a second erasing and writing operation for a second predetermined number of times; and evaluating the durability of the flash memory according to the test results of all erasing operations; the above The technical solution can take into account the durability detection of the erase operation of the block and the sector, so as to ensure the integrity of the reliability verification of the flash memory.

Description

technical field [0001] The invention relates to the technical field of storage, in particular to a durability testing method. Background technique [0002] Flash memory is a long-lived non-volatile memory, and data is deleted not in units of single bytes but in units of fixed blocks. The transfer efficiency of flash memory is very high, and it is very cost-effective in the small capacity of 1-4MB, but the very low writing and erasing speed greatly affects its performance. [0003] The maximum number of erasing and writing of flash memory is 100,000 times, and the unit of erasing and programming is a programming page. The operation of multiple erasing and programming cycles will cause the performance of the storage unit to decline, mainly manifested in the increase of erasing time and the number of times of erasing and writing. The decline in data retention caused by the increase, and there may be failures caused by process defects. [0004] Since the erasing unit is divide...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/18G11C29/56
CPCG11C29/18G11C29/56
Inventor 张宇飞龚斌
Owner WUHAN XINXIN SEMICON MFG CO LTD