Unlock instant, AI-driven research and patent intelligence for your innovation.

Durability testing method

A test method and durability technology, applied in the storage field, can solve problems such as inability to fully evaluate user usage, and achieve the effect of ensuring reliability verification and integrity

Active Publication Date: 2017-11-14
WUHAN XINXIN SEMICON MFG CO LTD
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the block and sector modes are most used by users, and the current evaluation method cannot fully evaluate user usage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Durability testing method
  • Durability testing method
  • Durability testing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The present invention will be further described below in conjunction with the drawings and embodiments.

[0033] In a preferred embodiment, a durability test method is proposed, which is applied to a flash memory; the flash memory may include a chip, the chip includes a plurality of blocks, each block includes a plurality of sectors; wherein, the reliability test method Can include:

[0034] Performing the first erasing and writing operations a first predetermined number of times;

[0035] Performing the second erase / write operation a second predetermined number of times; and

[0036] Evaluate the durability of the flash memory based on the test results of all erase operations;

[0037] Such as figure 2 As shown, the first erasing operation may include:

[0038] Step a1, take any block in the chip as the current block, and perform a sector erase operation on each sector in the current block;

[0039] Step a2, perform block erasing operations on blocks other than the current block...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of storage and particularly relates to a durability testing method applied to a flash memory. The flash memory comprises a chip, wherein the chip comprises a plurality of blocks, and each block comprises a plurality of sections. The durability testing method comprises the following steps: carrying out first erase-write operation for a preset number of times; carrying out second erase-write operation for a preset number of times; and estimating the durability of the flash memory according to test results of all erase operations. According to the technical scheme, the durability detection of the erase operations of the blocks and the sections can be simultaneously considered, so that the verification integrity of the reliability of the flash memory is guaranteed.

Description

Technical field [0001] The invention relates to the field of storage technology, in particular to a durability test method. Background technique [0002] Flash memory is a long-life non-volatile memory. Data deletion is not in a single byte unit but in a fixed block. The transfer efficiency of flash memory is very high, and it is very cost-effective in the small capacity of 1 to 4MB, but the very low writing and erasing speed greatly affects its performance. [0003] The maximum number of erasing and writing of flash memory is one hundred thousand times. The unit of erasing and programming is the programming page. Multiple erasing and programming cycles will cause the performance of the memory cell to degrade, mainly manifested in the increase in erasing time and the number of erasing and writing. The decline in data retention caused by the increase may also lead to failures caused by process defects. [0004] Since the erased unit is divided into three types: chip, block and secto...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/18G11C29/56
CPCG11C29/18G11C29/56
Inventor 张宇飞龚斌
Owner WUHAN XINXIN SEMICON MFG CO LTD