Manufacturing method of flash memory array and flash memory array

A technology of flash memory array and manufacturing method, which is applied in the manufacture of flash memory array and the field of flash memory array, can solve the problem of uneven selection gate voltage, achieve voltage stability, simplify design, and improve uniformity

Active Publication Date: 2018-06-01
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Application Information

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Problems solved by technology

[0006] In addition, with the selection gate formed by the current process, the voltage on the selection gate is uneven due to the residual shallow trench isolation oxide between the selection gates. Considering the uniformity of the voltage, usually every 64 A bit line, there must be a lead-out hole on the select gate, and lead it out through the back-end connection

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  • Manufacturing method of flash memory array and flash memory array
  • Manufacturing method of flash memory array and flash memory array
  • Manufacturing method of flash memory array and flash memory array

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Embodiment Construction

[0025] The manufacturing method of the flash memory array and the flash memory array of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. It should also be noted that if there are top views (plan views) and cross-sectional views in the drawings, even if it is the same structure, the proportions of the corresponding top views and cross-sectional views are not exactly the same.

[0026] figure 1 It is a schematic plan view of a flash memory array. The flash memory array is formed using an existing process. Specifically, the flash memory array includes: active regions 11 arrang...

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Abstract

The invention relates to a manufacturing method of a flash memory array and the flash memory array. In a manufacturing process of the flash memory array, ion injection of threshold voltage of a control grid electrode is adjusted for two times in a second region planning to form a floating grid electrode and the control grid electrode, wherein the second time of ion injection also covers a first region planning to form a selection grid electrode; when the manufacturing method of the flash memory array, provided by the invention, is used, a uniform conducting layer (such as a polycrystalline silicon strip) easily formed by the subsequently formed selection grid electrode is promoted; when the flash memory array works, voltage applied to the selection grid electrode is relatively uniform; theflash memory array manufactured by the method is utilized and leading-out holes of the selection grid electrode are formed in two ends of the whole selection grid electrode; compared with a manner ofsetting a selection grid leading-out hole on the selection grid electrode at intervals of a certain quantity of site lines in an existing technology, the design of the flash memory array can be simplified and the coupling rate of a flash memory can be improved.

Description

technical field [0001] The invention relates to a semiconductor device and a method, in particular to a manufacturing method of a flash memory array and the flash memory array. Background technique [0002] Memory is used to store a large amount of digital information. In recent years, the progress of process technology and market demand have spawned more and more high-density various types of memory, such as static random access memory (SRAM), dynamic random access memory (DRAM), ferroelectric memory ( FRAM) and flash memory (FLASH Memory), etc. Among them, the flash memory can still maintain the on-chip information even after the power supply is turned off, and has the advantages of being electrically erasable and reprogrammable without requiring a special high voltage. In addition, the flash memory also has low cost and high density. characteristics, thus becoming the mainstream memory of non-volatile semiconductor storage technology. [0003] In order to improve integr...

Claims

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Application Information

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IPC IPC(8): G11C16/04H01L21/265
CPCG11C16/04H01L21/265
Inventor秦佑华陈昊瑜殷冠华
OwnerSHANGHAI HUALI MICROELECTRONICS CORP