Unlock instant, AI-driven research and patent intelligence for your innovation.

Carbon nanotube purification method, thin film transistor and preparation method

A technology of thin film transistors and carbon nanotubes, which is applied in the manufacture of carbon nanotubes, nanocarbons, semiconductors/solid-state devices, etc., and can solve the problems of reduced conductivity of CNT-TFT

Active Publication Date: 2020-02-07
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

m-SWCNT is used to prepare nanoscale electrodes, while sc-SWCNT is a conductive channel with high mobility and on-off ratio, and the band gap of sc-SWCNT with different diameters will also be different, and the band gap distribution width is different. It will cause the electrical conductivity of the prepared CNT-TFT to be greatly reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Carbon nanotube purification method, thin film transistor and preparation method
  • Carbon nanotube purification method, thin film transistor and preparation method
  • Carbon nanotube purification method, thin film transistor and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0035] see figure 1 , the invention provides a method for purifying semiconducting single-walled carbon nanotubes, comprising:

[0036] S101, adding single-walled carbon nanotubes mixed with metallic single-walled carbon nanotubes and semiconductor single-walled carbon nanotubes into an organic solvent containing a small molecular compound, and ultrasonically dispersing to obtain a carbon nanotube suspension.

[0037] Specifically, the single-walled carbon nanotub...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for purifying carbon nanotubes, comprising: taking single-walled carbon nanotubes mixed with metallic single-walled carbon nanotubes and semiconductor single-walled carbon nanotubes and adding them to an organic solvent containing a small molecular compound, Ultrasonic dispersion to obtain a suspension of carbon nanotubes; centrifuging the suspension of carbon nanotubes to remove sediment from the suspension of carbon nanotubes to obtain a supernatant of semiconducting single-walled nanotubes. The present invention also provides a preparation method of a thin film transistor, comprising: forming a bottom gate on a substrate and a bottom gate insulating layer covering the bottom gate; An active layer is formed on the insulating layer; a source electrode and a drain electrode are respectively formed at opposite ends of the active layer; a top gate insulating layer, a top gate electrode and a passivation layer are sequentially formed on the source electrode and the drain electrode. The invention also provides a thin film transistor.

Description

technical field [0001] The invention relates to the technical field of display manufacturing, in particular to a carbon nanotube purification method, a thin film transistor and a preparation method. Background technique [0002] In recent years, carbon nanotube thin film transistor (CNT-TFT, Carbon Nanotube Thin Film Transitor) has attracted the attention of many researchers in the display field because of its high mobility, high transparency and high elasticity. [0003] Generally, CNT-TFTs are prepared from networked carbon nanotube films. Among them, single-walled carbon nanotubes (SWCNT, Single-Walled Carbon Nanotube) will have metallic single-walled carbon nanotubes (m-SWCNT, metallic Single-Walled Carbon Nanotube) and semiconducting single-walled carbon nanotubes ( sc-SWCNT, Semiconductor Single-Walled Carbon Nanotube) mixed. m-SWCNT is used to prepare nanoscale electrodes, while sc-SWCNT is a conductive channel with high mobility and on-off ratio, and the band gap o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/17H01L51/05H01L51/30
CPCH10K85/221H10K10/466
Inventor 谢华飞
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD