Method for purifying carbon nanotubes, thin film transitor and preparation method of thin film transitor

Abstract

The invention provides a method for purifying carbon nanotubes. The method comprises the steps of: adding single-walled carbon nanotubes which comprise metallic single-walled carbon nanotubes and semiconducting single-walled carbon nanotubes into a small molecule compound-containing organic solvent, and performing ultrasonic dispersion to obtain carbon nanotube suspension; and performing centrifugation on the carbon nanotube suspension to remove sediment in the carbon nanotube suspension so as to obtain semiconducting single-walled nanotube supernatant. The invention also provides a preparation method of a thin film transistor. The preparation method of the thin film transistor comprises the steps of: performing formation of a bottom gate and a bottom gate insulating layer which covers thebottom gate on a substrate, performing formation of an active layer on the bottom gate insulating layer by using the semiconducting single-walled nanotube supernatant, conducting formation of a source electrode and a drain electrode at two opposite ends of the active layer separately, and carrying out formation of a top gate insulating layer, a top gate and a passivation layer sequentially formedon the source electrode and drain electrode. The invention also provides the thin film transistor.

Description

technical field [0001] The invention relates to the technical field of display manufacturing, in particular to a carbon nanotube purification method, a thin film transistor and a preparation method. Background technique [0002] In recent years, carbon nanotube thin film transistor (CNT-TFT, Carbon Nanotube Thin Film Transitor) has attracted the attention of many researchers in the display field because of its high mobility, high transparency and high elasticity. [0003] Generally, CNT-TFTs are prepared from networked carbon nanotube films. Among them, single-walled carbon nanotubes (SWCNT, Single-Walled Carbon Nanotube) will have metallic single-walled carbon nanotubes (m-SWCNT, metallic Single-Walled Carbon Nanotube) and semiconducting single-walled carbon nanotubes ( sc-SWCNT, Semiconductor Single-Walled Carbon Nanotube) mixed. m-SWCNT is used to prepare nanoscale electrodes, while sc-SWCNT is a conductive channel with high mobility and on-off ratio, and the band gap o...

AI Technical Summary

Problems solved by technology

m-SWCNT is used to prepare nanoscale electrodes, while sc-SWCNT is a conductive channel with high mobility and on-off ratio, and the band gap of sc-SWCNT with different diameters will also be different, and the band gap distribution width is different. It will cause the electrical conductivity of the prepared CNT-TFT to be greatly reduced

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