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Three dimensional memory device, and method of forming epitaxial structure in channel holes of the same

A technology of three-dimensional storage and epitaxial structure, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as leakage reliability and risk, achieve the effect of simplifying process difficulty and solving leakage and reliability risks

Active Publication Date: 2018-08-17
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0007] The invention provides a method for forming an epitaxial structure in a channel hole of a three-dimensional memory device, which can solve problems such as leakage and reliability risks caused by the formation of an epitaxial structure in an auxiliary region

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  • Three dimensional memory device, and method of forming epitaxial structure in channel holes of the same
  • Three dimensional memory device, and method of forming epitaxial structure in channel holes of the same
  • Three dimensional memory device, and method of forming epitaxial structure in channel holes of the same

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[0029] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0030] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0031] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

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Abstract

The invention relates to a method of forming an epitaxial structure in channel holes of a three dimensional memory device. The method includes the steps: providing a semiconductor structure which includes a core area and an auxiliary area, wherein the core area has channel holes and the auxiliary area has dummy holes and / or trenches; forming a first epitaxial structure at the bottom of the channelholes, and forming a second epitaxial structure at the bottom of the dummy holes and / or trenches; and using a photoetching step for the auxiliary area to remove the second epitaxial structure at thebottom of the dummy holes and / or trenches. The method of forming an epitaxial structure in channel holes of a three dimensional memory device can solve the electric leakage and reliability risk causedby the epitaxial structures and can simplify the process difficulty at the same time as the epitaxial structure is formed in the channel holes of the core area and no epitaxial structure is formed inthe dummy holes and / or trenches of the auxiliary area.

Description

technical field [0001] The invention mainly relates to a semiconductor manufacturing method, in particular to a method for forming an epitaxial structure in a channel hole of a three-dimensional memory device, and the three-dimensional memory device. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, the industry has developed memory devices with a three-dimensional (3D) structure to increase integration density by three-dimensionally arranging memory cells on a substrate. [0003] A three-dimensional memory device is typically divided into a core region forming memory cells and an auxiliary region forming peripheral structures. In a three-dimensional memory device, such as 3D NAND flash memory, an epitaxial structure needs to be formed at the bottom of the channel hole in the core area. In this process, in some auxiliary areas, such as the dummy hole (dummy hole) in the step area (Stair Step, SS) and the bottom of the tren...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11551H10B41/20
CPCH10B41/20
Inventor 杨号号吕震宇陈俊胡禺石陶谦董金文蒲月强程晓恬许健肖莉红
Owner YANGTZE MEMORY TECH CO LTD
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