305results about How to "Simplify processing difficulty" patented technology

The invention relates to an intelligent vehicle lane change path planning method based on a polynomial and radial basis function (RBF) neural network. The intelligent vehicle lane change path planning method comprises the following steps that: the state information of obstacles and lane change vehicles in lanes are detected and determined according to a vehicle-mounted sensor, and the state information comprises positions, speed, acceleration and shapes; the lane change vehicles and the obstacles are geometrically covered, and in addition, a lane change path model using the time as the independent variable is built; boundary conditions of the lane change vehicles are obtained by the dynamic RBF neural network; the lane change path parameter is subjected to traversing in a certain range according to a certain step length, and the calculation of a polynomial method is combined to obtain the lane change path set under the specific boundary conditions; index functions for evaluating the merits of the lane change patch performance are defined, the optimal path in generated lance change paths is screened according to the index functions and is applied to the practical lane change process of vehicles; and whether the RBF neural network is updated or not is determined according to the merits of the boundary conditions of the generated lane change paths. The neural network has good self-adaption capability, so that the problem that the RBF neural network structure is oversize or undersize is solved.

The invention relates to an almost perfect absorbing structure for wide wave band, which comprises the following steps: (1) determining absorbing material and metal material according to the incoming wave frequency band; (2) manufacturing structure of apparatus; (3) determining the range of diameter d of metal spherical particles according to the local effect of plasma on the surface of the metalspherical particles; (4) determining the distribution and range of period p according to the electromagnetic resonation effect among metal spherical particles-medium-metal film; and (5) optimizing particle diameter d and distribution period p to realize expansion of the bandwidth of the entire apparatus. The invention realizes almost perfect absorbing function on wide wave band within visible light range.

The invention provides a preparation method and application of a polycarboxylate water reducer containing a phosphate group. According to the preparation method, the defects that the structure and the molecular weight of the water reducer cannot be accurately controlled due to the chain transfer action of the phosphate group can be overcome. The preparation method comprises the steps that an unsaturated polyether macromonomer, unsaturated carboxylic ester and unsaturated alcohol are subjected to a copolymerization reaction in organic solvent to obtain a polycarboxylate water reducer pre-polymer; phosphorylated modification is performed on the polycarboxylate water reducer pre-polymer; on the condition that an acid aqueous solution exists, a carboxylic ester group on a product obtained after phosphorylated modification is hydrolyzed, and the organic solvent is removed; neutralization is performed to obtain the polycarboxylate water reducer containing the phosphate group; the unsaturated polyether macromonomer does not contain hydroxyl, phosphorylated modification is achieved through the step that an alcoholic hydroxyl group in the polycarboxylate water reducer pre-polymer and a phosphate esterification reagent are subjected to an esterification reaction, and the using amount of the phosphate esterification reagent is sufficient to completely esterify the alcoholic hydroxyl group in the polycarboxylate water reducer pre-polymer.

The invention provides a preparation method and application of a polycarboxylate superplasticizer containing phosphate groups. The preparation method can overcome the defect that due to the chain transfer effect of the phosphate groups, the structure and molecular weight of the superplasticizer can not be accurately controlled. The preparation method includes the steps that firstly, unsaturated polyether macromonomers and unsaturated anhydride are subjected to a solution copolymerization reaction in an organic solvent to obtain a polycarboxylate superplasticizer prepolymer; then, the polycarboxylate superplasticizer prepolymer is subjected to phosphorylation modification to obtain the polycarboxylate superplasticizer, wherein the unsaturated polyether macromonomers do not contain OH, phosphorylation modification refers to that anhydride groups in the polycarboxylate superplasticizer prepolymer and a phosphorylation reagent are subjected to an amidation reaction to obtain the polycarboxylate superplasticizer containing the phosphate groups, molecules of the phosphorylation reagent contain one or more phosphate groups and amino capable of participating in the amidation reaction, and the molar ratio of unsaturated anhydride participating in the solution copolymerization reaction to the phosphorylation reagent is 1:(0.01-0.5).

The invention relates to a method of forming an epitaxial structure in channel holes of a three dimensional memory device. The method includes the steps: providing a semiconductor structure which includes a core area and an auxiliary area, wherein the core area has channel holes and the auxiliary area has dummy holes and/or trenches; forming a first epitaxial structure at the bottom of the channelholes, and forming a second epitaxial structure at the bottom of the dummy holes and/or trenches; and using a photoetching step for the auxiliary area to remove the second epitaxial structure at thebottom of the dummy holes and/or trenches. The method of forming an epitaxial structure in channel holes of a three dimensional memory device can solve the electric leakage and reliability risk causedby the epitaxial structures and can simplify the process difficulty at the same time as the epitaxial structure is formed in the channel holes of the core area and no epitaxial structure is formed inthe dummy holes and/or trenches of the auxiliary area.

The invention belongs to the field of mapping and navigation, and discloses a pseudolite system and a method based on GNSS(Global Navigation Satellite System) precision time service. The method comprises the following steps: driving a GNSS receiver and a pseudolite signal transmitter by utilizing a homologous crystal oscillator, and solving a clock difference of a local clock of a receiver in realtime by utilizing a precision single point positioning model with coordinate constraint; eliminating a hardware delay between the signal transmitter and the GNSS receiver through a method of calibrating the hardware delay; and broadcasting an obtained clock difference of the local clock to a user in a form of electric files to realize a mathematical synchronization of the local clock and the GNSSsystem time. According to the pseudolite system and the method based on GNSS precision time service, the precision time synchronization of a single pseudolite system and a GNSS system can be realized, and a wired or wireless time synchronization link does not need to be constructed, so that the laying cost and hardware complexity are reduced; and the pseudolite system facilitates the joint positioning calculation with GNSS signals, so that the usability and the reliability of navigation positioning are improved.

The invention belongs to the technical field of antenna engineering, and discloses a strong mutual-coupling ultra-wideband wide-angle scanning dual-polarized conformal phased-array antenna. The strong mutual-coupling ultra-wideband wide-angle scanning dual-polarized conformal phased-array antenna comprises a conformal dielectric substrate, conformal dipole units, a circular metal patch, a conformal dielectric layer, a conformal dielectric impedance matching layer, a metal ground matching layer, an unbalance feeding structure, five grounding metallized through holes, a microwave coaxial cable and a metallized frustum-shaped carrier, wherein the conformal dipole units are printed on an upper layer of the conformal dielectric substrate, and placed in a vertical intersection way; the circular metal patch is printed on a lower layer of the conformal dielectric substrate; the conformal dielectric layer is positioned below the conformal dielectric substrate, and subjected to hole digging treatment; the conformal dielectric impedance matching layer is positioned above the conformal dielectric substrate; and the microwave coaxial cable is used for feeding the unbalance feeding structure. The weight of the novel antenna is only 70 percent that of a conventional phased array, so that the requirement on the load carrying of a carrier is lowered greatly. The metal ground matching layer is used, so that an original complex matching circuit is omitted; the machining difficulty is lowered greatly; and the machining cost of the antenna on engineering applications is lowered.

The invention discloses a preparation method of ultra-pure vanadium pentoxide. The preparation method comprises the following steps of: removing impurities in advance; transferring phosphorus and silicon in a vanadium-containing solution into a solid phase for removal; performing calcification and vanadium precipitation; transferring vanadium in a liquid phase into a calcium vanadate phase; leaving the impurities such as chromium, manganese, potassium and sodium in the liquid phase for removal; performing solubilization reaction of vanadium in the calcium vanadate into the liquid phase through ammonium bicarbonate and/or ammonium carbonate; leaving the calcium, phosphorus, silicon, iron and magnesium in the solid phase for removal; replacing residual trace cations of the liquid phase with ammonium ions by an ammonium type cation exchange system to realize deep purification; and performing cooling vanadium precipitation and deamination calcination to obtain vanadium pentoxide. In the invention, the process route is simple, the drug consumption is low, the vanadium pentoxide with purity of over 99.95% can be stably obtained, and the content of main impurities such as iron, chromium, manganese, silicon, phosphorus, calcium, sodium, magnesium, potassium and aluminum is all lower than 0.002%.

The invention provides an innercurve multiple-action radial plunger type hydraulic motor, wherein, the plunger holes of a rotator are connected with rollers, a sliding bearing, a plunger and elastic retaining rings; the elastic retaining rings are evenly distributed with claw elbows in a circumference direction; two ends of the outer surface of the rotator are provided with a groove respectively; two end surfaces of the rotator are provided with notches which are communicated with the plunger holes and have the same number as the plunger holes; the elastic retaining rings are clamped in the two grooves on the outer surface of the rotator; the claw elbows on the elastic retaining rings are in clearance fit with the two end surfaces of the roller in each plunger hole; and the rollers are clamped in the middle of two claw elbows. Each elastic retaining ring is of an integral structure, thus the ring does not need to be assembled in each plunger hole independently; and only two elastic retaining rings are clamped in the grooves on the rotator so as to limit the rollers in all the plunger holes to axially move, thereby leading even stress on the rollers, enabling a hydraulic energy conversion part to work stably, improving the mechanical efficiency and the reliability of the hydraulic motor, and prolonging the service life of the hydraulic motor.

The invention discloses a pixel element structure and a non-refrigeration infrared focal plane detector based on the pixel element structure. The pixel element structure comprises a silicon substrate, an absorption unit, a conductive unit and a condensation unit which is used for collecting radiation beams and irradiating the radiation beams into the silicon substrate, wherein the condensation unit is fixed on the lower surface of the silicon substrate; a light-transmitting area is arranged in the center of the upper surface of the silicon substrate, and a reading circuit is arranged on a same face, close to the peripheral position of the light-transmitting area, of the light-transmitting area; and one end of the conductive unit is electrically connected with the absorption unit, and the other end of the conductive unit is electrically connected with a contact electrode of the reading circuit. The absorption unit is suspended on the upper surface of the silicon substrate through the conductive unit. Meanwhile, a first substrate integrated with the pixel element structure, and a second substrate provided with a cavity and a through hole array are fixed in a bonding mode to constitute the non-refrigeration infrared focal plane detector, the purpose that fill factors reach as high as 90%-100% is achieved, and the infrared focal plane detector has the advantages of being lower in heat conduction, faster in response speed, and simpler in manufacturing process.

The invention provides a method for manufacturing a frame of a bicycle. The method comprises the following steps of: (1) manufacturing frame fittings, wherein the frame fittings comprise frame pipes and joints, the frame pipes comprise an upper pipe, a back upper fork, a back lower fork, a lower pipe and a middle pipe which are all made of aluminum alloy, and the joints comprise a head pipe joint, a middle pipe joint and a five-way joint which are all made of magnesium alloy; (2) processing surfaces of the frame fittings; (3) molding the frame pipes and the joints by gluing; (4) grinding and polishing the frame; and (5) performing baking finish on the surface of the frame. The whole frame utilizes the gluing molding technology so that the frame has beautiful appearance, better streamline form, and higher size precision; furthermore, the deformation and stress concentration caused by welding in the traditional manufacturing method are eliminated.

The invention discloses a wall-mounting type air-conditioner indoor unit which comprises a chassis and a shell. The chassis comprises a base plate constituting the external main body of the chassis and a hard foam frame embedded on the base plate. An integral-type shell structure is adopted by the air-conditioner indoor unit, and therefore assembling performance is greatly improved. Starting from the working principle of an air-conditioner, the function of a filter screen is fully brought into play. Furthermore, a totally-enclosed design also ensures that the air can not enter the air-conditioner from gaps on the shell. In addition, the assembling performance is greatly improved, and therefore, the air-conditioner is conveniently and fast to clean by a user. Because foam and a iron plate are matched to form the structure of the chassis, the situation that dew is formed on the shell of the air-conditioner is well solved, and meanwhile the iron plate is fixed with all weight-bearing components inside the air-conditioner in a matched mode, and therefore the strength of the air-conditioner is greatly improved. A support plate of a motor is adopted to fix a heat exchanger, and the heat exchanger is connected with the support plate through a hook structure, and therefore the problem that a copper pipe collides with a support cover is solved and meanwhile product sharing is not affected.

The invention belongs to the technical field of mechanical seal and particularly relates to an air curtain protecting device of a labyrinth machine tool spindle. The device provided by the invention aims to solve the problem that a conventional air curtain protecting device is great in machining difficulty. In order to solve the problem, the air curtain protecting device provided by the invention comprises an end cover mounted on the machine tool spindle, wherein a first air flow channel is formed in the end cover, one end of the first air flow channel communicates to an air inlet while the other end of the first air flow channel communicates to a second air flow channel in the end cover, and the end cover comprises a labyrinth disc and a labyrinth base, the labyrinth disc is inlaid in the labyrinth base and therefore, the second air flow channel is formed between the labyrinth disc and the labyrinth base; gas enters the first air flow channel from the air inlet and is discharged from the second air flow channel. The air curtain protecting device further comprises a seal cover, wherein the seal cover is matched with the end cover to form a third air flow channel which communicates with the second air flow channel. A chute is machined on the radial bevel of the labyrinth disc to form an exhaust vent, so that the machining difficulty of the air curtain protecting device is simplified to a great extent.

Provided is a high-temperature-resistant low-loss compound insulation coaxial cable. The high-temperature-resistant low-loss compound insulation coaxial cable is characterized in that a solid or stranded inner metal conductor (1), a polytetrafluoroethylene micropore compound insulation layer (2), an outer conductor (3) and a sheath layer (4) are arranged from inside to outside in sequence, the solid or stranded inner metal conductor (1) longitudinally extends along the central axis of the cable, the outer conductor (3) is formed by knitting metal or is additionally provided with an inner shielding layer, the sheath layer (4) is made of FEP copolymer or low-smoke halogen-free flame retardant polyolefin, and the inner metal conductor (1) and the outer conductor (3) are separated by the polytetrafluoroethylene micropore compound insulation layer (2); the polytetrafluoroethylene micropore compound insulation layer (2) is made of modified polytetrafluoroethylene organic-inorganic nanocomposites filled with nano polyhedral oligomeric silsesquioxanes (POSS). According to the coaxial cable, the dielectric constant of the insulation layer of the cable is reduced. A traditional solid polytetrafluoroethylene insulation dielectric constant is reduced to 1.2-1.6 from 2.1 and is reduced by about 24 percent to 43 percent, and the signal attenuation of cable high-frequency communication is reduced.

An embodiment of the invention provides an array substrate, a preparing method of the array substrate and a display device of the array substrate and relates to the technical field of displaying. The use of halftone masking process is avoided, the process difficulty is simplified, and the cost is saved. The preparing method comprises the steps of using once composite picture process to form a pattern comprising a grid, forming a grid insulating layer on a substrate where the pattern comprising the grid is formed, using the once composite picture process to form a first pattern and a second pattern above the first pattern, forming a pattern layer comprising a broken area on a substrate where the second pattern is formed, and using the once composite picture process to at least form a pattern comprising a source electrode, a drain electrode and a pixel electrode which is electrically connected with the drain electrode through the broken area. In addition, the first pattern corresponds to a pattern of a semiconductor active layer, the second pattern corresponds to the source electrode and the drain electrode, the broken area corresponds to a gap between the source electrode and the drain electrode, the minimum width of the broken area is larger than that of the gap between the source electrode and the drain electrode, and at least the drain electrode is exposed out of the broken area. The array substrate is applied to manufacturing display devices.

The invention relates to a rotary valve type valve rod and a control valve in order to overcome the defects of difficult machining and high fabrication cost of existing rotary valve type valve rods. The rotary valve type valve rod comprises a plurality of valve rod sections; valve rod oil channels are designed in the valve rod sections; the adjacent valve rod sections are sequentially and fixedly connected in the axial direction; the positions, on the axial end faces of the valve rod sections, of the valve rod oil channels are communicated with the outside or with the valve rod oil channels in the adjacent valve rod sections; some valve rod sections are provided with spherical surface joints which are provided with annular spherical surfaces surrounding the valve rod sections; each annular spherical surface is provided with a valve rod oil opening which is communicated with the corresponding valve rod oil channel. The valve rod is mainly composed of the multiple valve rod sections, the machining difficulty of the valve rod sections is low, and molding for forming the valve rod oil channels is simple. Meanwhile, the structures of part of the multiple valve rod sections forming the valve rod can be made to be identical, the interchangeability can be greatly improved, and the machining difficulty can be greatly reduced.

The invention discloses a multi-station tyre gripper rotating device of a tyre spraying coater and a rotating manner thereof. The device comprises a multi-station tyre gripper component, a vertical center rotating shaft component, a rotating drive component and a dual-node metal diaphragm coupler. The multi-station tyre gripper component forms a rib-shaped structure by no less than three groups of tyre grippers and corresponding connecting cross arms and connecting arm supports. The rib-shaped structure is fixedly connected to the upper part of the vertical center rotating shaft. The lower end of the vertical center rotating shaft is connected to the rotating drive component including a cam divider through the dual-node metal diaphragm coupler. When the device rotates, a vertical output end of the cam divider drives a vertical shaft connected to the vertical output end, and the multi-station tyre gripper component to rotate by driving a horizontal input end of the cam divider through a gear motor, so as to achieve actions of simultaneously rotating of the multi-station tyre grippers. The multi-station tyre gripper rotating device is simple in structure, high in rotating efficiency, and accurate to position; and the grippers and the connecting cross arms are simply installed and conveniently adjusted.

The invention provides a method for testing rock composite fracture toughness based on asymmetric three-point bending loading of an NDB sample, and the method comprises the steps: enabling a test piece body to be a rectangular deep beam (NDB) with a cutting groove, enabling the shape of the test piece body to be a cuboid, prefabricating a cutting groove with the height of a in the middle cross section of the body, extending towards the thickness direction of the body, and penetrating through the front and rear end faces in the body thickness direction; wherein the length L of the test piece body is twice the width W of the test piece body, and the thickness B is not less than 0.8 W. Based on the NDB sample, the invention provides a method for carrying out rock purity type I, rock purity type II and rock purity type I-II composite fracture toughness testing by using asymmetric three-point bending loading, and application of tension and shear load is realized through asymmetric loading.The NDB sample used in the invention has a simple structure and is easy to process by using rock blocks. A clamp used for loading is a common three-point bending clamp, only asymmetric arrangement ofthe supports is needed, experiment loading is quite convenient, and the pure I type, the pure II type and the I-II-type composite fracture toughness of the whole composite loading interval can be achieved.

A 3D memory device is disclosed that includes a core region having a channel hole; an auxiliary region including virtual holes and/or grooves; a substrate is a bottom layer of that 3D memory device ina direction perpendicular to the surface of the 3D memory device, wherein the bottom of the channel hole has an epitaxial layer, and the bottom of the dummy hole and/or trench has an oxide lay. The embodiment of the invention forms an oxide layer in a virtual hole and/or a trench in an auxiliary region, and forms an epitaxial layer in a channel hole in a core region, thereby solving the problemsof uneven epitaxial layer and current leakage caused by the formation of the epitaxial layer.

The invention discloses a scroll compressor. The scroll compressor comprises an upper support and an upper cover, wherein the upper support and the upper cover are connected. A movable scroll plate is arranged in the upper support and in the upper cover. A static scroll plate is coaxially arranged on the side, close to the upper cover, of the movable scroll plate. An elastic circular ring is coaxially arranged on the side, close to the upper support, of the movable scroll plate. The upper support is provided with an inner supporting part and an outer supporting part, wherein the inner supporting part and the outer supporting part are matched with the elastic circular ring. A suspended part is formed between the inner supporting part and the outer supporting part. A back pressure sealing groove is formed in the bottom face of the suspended part. A back pressure sealing ring tightly attached to the elastic circular ring is arranged in the back pressure sealing groove. A back pressure cavity and an air sucking cavity which communicate with the suspended part are formed in the upper support. An exhaust cavity communicating with the back pressure cavity is formed in the upper cover. A compression cavity communicating with the air sucking cavity and the exhaust cavity is formed between the movable scroll plate and the static scroll plate. The scroll compressor is sufficient and reliable in sealing effect, and the technology difficulty of a sealing structure of the scroll compressor is low.

The invention relates to the technical field of microelectronics, and discloses a nonvolatile three-dimensional semiconductor memory device and a preparing method. The three-dimensional semiconductor memory device comprises bit lines made of strip-shaped connecting materials which are isolated by a plurality of insulating layers; each strip-shaped connecting bit line is provided with two surface zones along the side direction; word lines made of connecting materials are arranged in the direction orthogonal with the connecting bit lines; and storage materials are placed in the middle of a cross-shaped overlapping zone which is then used as an electric charge capturing stack zone or a resistance changing function zone. High-dielectric-constant materials can be used in a function zone of the three-dimensional semiconductor memory device, and high-work function materials such as metal nitride are used in a gate electrode. Therefore, according to the preparing method of the three-dimensional semiconductor memory device, partitioning zones arranged between the word lines are introduced first, then storage function layer materials and gate materials are deposited in a back-gate technology, a technology is simplified, material pollution is avoided, and meanwhile performance of the device is improved.

The invention discloses a numerical control processing method for an aluminum alloy high-precision flat bottom hanging hole. The numerical control processing method comprises the following steps thatS1 part clamping is carried out; S2 initial hole processing is carried out, wherein S21 the diameter of a processed initial hole is determined to be phiF, the diameter of a final hole is phi, and thediameter of the final hole and the diameter of the initial hole meet the condition that the difference between phi and phiF is larger than or equal to 1 mm, and the initial hole is coaxial with the final hole, S22 a hole milling tool is selected as an initial hole processing tool, a hole milling manner is adopted for initial hole processing, the hole milling tool bottom tooth radius R is consistent with the hole bottom angle diameter phiR, and the length to diameter ratio of the hole milling tool is smaller than 4:1, and S23 machining is carried out and specifically refers to the condition that spiral tool feeding sequence milling processing is adopted, the spiral tool feeding trajectory diameter is larger than D/4, part axial layering processing is carried out, the axial machining depth meets the condition that LG is equal to LH, in the formula, the D is the hole milling tool diameter, the LG is the axial machining depth of the initial hole, and the LH is the depth of the final hole;step S3 boring processing is carried out; and step S4 root bottom angle processing is carried out, and processing is carried out. The numerical control processing method can effectively improve the processing quality and efficiency of the flat bottom hanging hole.