The invention relates to the technical field of
semiconductor manufacturing, in particular to a light-emitting
diode which comprises an epitaxial laminated layer, a
dielectric layer, a
metal reflecting layer, a substrate and an oxidation
protection layer, the epitaxial laminated layer sequentially comprises a first
semiconductor layer, a light-emitting layer and a second
semiconductor layer in the direction from the upper surface to the lower surface, the
dielectric layer is arranged on the lower surface of the epitaxial laminated layer, and the
metal reflecting layer is arranged on the
metal reflecting layer. The
dielectric layer is provided with a plurality of through holes, the metal reflecting layer is arranged on one side, far away from the epitaxial laminated layer, of the
dielectric layer and is electrically connected with the epitaxial laminated layer through the through holes, the substrate is arranged on one side, far away from the epitaxial laminated layer, of the metal reflecting layer, and the oxidation
protection layer wraps the side wall of the metal reflecting layer. By means of the arrangement, the metal migration phenomenon of the metal reflecting layer can be effectively avoided, the electric leakage phenomenon of the light-emitting
diode is avoided, and the quality of the light-emitting
diode is improved.