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Three-dimensional memory device and method for forming epitaxial structure in its channel hole

A technology of three-dimensional storage and epitaxial structure, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve problems such as risk and leakage reliability, and achieve the effect of simplifying process difficulty and solving leakage and reliability risks

Active Publication Date: 2019-06-21
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0007] The invention provides a method for forming an epitaxial structure in a channel hole of a three-dimensional memory device, which can solve problems such as leakage and reliability risks caused by the formation of an epitaxial structure in an auxiliary region

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  • Three-dimensional memory device and method for forming epitaxial structure in its channel hole
  • Three-dimensional memory device and method for forming epitaxial structure in its channel hole
  • Three-dimensional memory device and method for forming epitaxial structure in its channel hole

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Embodiment Construction

[0029] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0030] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0031] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

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Abstract

The invention relates to a method for forming an epitaxial structure in a channel hole of a three-dimensional memory device, comprising the following steps: providing a semiconductor structure, the semiconductor structure includes a core region and an auxiliary region, the core region has a channel hole, the The auxiliary region has a dummy hole and / or a trench; a first epitaxial structure is formed at the bottom of the channel hole, and a second epitaxial structure is formed at the bottom of the dummy hole and / or trench; The photolithography step removes the second epitaxial structure at the bottom of the dummy hole and / or trench. Since the present invention only forms the epitaxial structure in the channel hole of the core area, and does not form the epitaxial structure in the dummy hole and / or trench of the auxiliary area, it can solve the leakage and reliability risks caused by the formation of the epitaxial structure, and at the same time simplify the Increased the difficulty of the process.

Description

technical field [0001] The invention mainly relates to a semiconductor manufacturing method, in particular to a method for forming an epitaxial structure in a channel hole of a three-dimensional memory device, and the three-dimensional memory device. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, the industry has developed memory devices with a three-dimensional (3D) structure to increase integration density by three-dimensionally arranging memory cells on a substrate. [0003] A three-dimensional memory device is typically divided into a core region forming memory cells and an auxiliary region forming peripheral structures. In a three-dimensional memory device, such as 3D NAND flash memory, an epitaxial structure needs to be formed at the bottom of the channel hole in the core region. In this process, in some auxiliary areas, such as the dummy hole (dummy hole) in the step area (Stair Step, SS) and the bottom of the tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11551H10B41/20
CPCH10B41/20
Inventor 杨号号吕震宇陈俊胡禺石陶谦董金文蒲月强程晓恬许健肖莉红
Owner YANGTZE MEMORY TECH CO LTD
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