Unlock instant, AI-driven research and patent intelligence for your innovation.

Wafer level uniformity control in remote plasma film deposition

A technology for wafers and deposition films, which is applied in semiconductor/solid-state device manufacturing, coating, gaseous chemical plating, etc., and can solve problems such as the effect of performance uniformity

Pending Publication Date: 2018-09-18
LAM RES CORP
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These issues are not related to remote plasma processing (e.g., impactor carbide formation does not require local plasma conditioning), but geometries and materials driven by PECVD can have implications for on-wafer performance (e.g., uniformity) of remote plasma processing Negative impact

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer level uniformity control in remote plasma film deposition
  • Wafer level uniformity control in remote plasma film deposition
  • Wafer level uniformity control in remote plasma film deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0071] Plasma generator system 100 may be a remote, stand-alone device or an in-situ module incorporated into a processing system. Figure 1A The illustrated plasma generator system 100 is an example of a remote device. According to an exemplary embodiment of the invention, a plasma generator system 100 includes a vessel 104 , a coil 108 , an energy source 110 , a gas flow distribution vessel 106 and a showerhead 112 . While in-situ modules may not be configured to work with Figure 1A The embodiment shown is the same, but it may include similar components.

[0072] Vessel 104 is configured to receive a process gas that may be ionized by the electric field and converted into a plasma comprising species such as electrons, ions, and reactive radicals for depositing or removing material on or from substrate 290 and the like. In an exemplary embodiment, container 104 is made of a material capable of enhancing an electric field. For example, container 104 may be made of a dielect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to wafer level uniformity control in remote plasma film deposition. An assembly for use in a process chamber for depositing a film on a wafer is provided. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. Apedestal step has a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameterof the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring.The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.

Description

technical field [0001] The present disclosure relates to semiconductor substrate processing methods and apparatus tools, and more particularly to a set of design geometries for susceptor configurations for controlling the uniformity of deposition. Background technique [0002] Improved film uniformity is important in plasma enhanced chemical vapor deposition (PECVD) and plasma atomic layer deposition (ALD) techniques. Chamber systems for performing PECVD and ALD are associated with hardware features that cause non-uniform film deposition. For example, hardware features may be related to chamber asymmetry and base asymmetry. Additionally, many processes experience azimuthal non-uniformity from various sources. In particular, multi-station modules performing PECVD and ALD have large open reactors that can cause azimuthal non-uniformity and edge drop effects. Inhomogeneities are also present in single-station modules due to non-uniform physical chamber geometry, including th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/513C23C16/458C23C16/455
CPCC23C16/45544C23C16/4581C23C16/513C23C16/4585H01L21/68785H01L21/68742H01L21/68757C23C16/4586C23C16/505
Inventor 杰弗里·霍恩邱华坦雷切尔·巴特泽袁广毕桂哲
Owner LAM RES CORP