A kind of preparation method of SERS chip

A chip and pit technology, applied in the field of SERS chip preparation, can solve the problems of high cost, difficulty in large-scale preparation, cumbersome hydrochloric acid cleaning operation, etc., and achieve the effect of low cost, stable properties and simple preparation method

Active Publication Date: 2021-07-27
苏州英菲尼纳米科技有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is cumbersome to transfer the template and wash with hydrochloric acid, and it is difficult to transfer AAO to other templates to achieve large-scale preparation, and the cost is high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of SERS chip
  • A kind of preparation method of SERS chip
  • A kind of preparation method of SERS chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] (1) Mix chloroauric acid aqueous solution (0.01M, 0.5ml) with dodecyltrimethylammonium chloride solution (0.1M, 19ml) evenly. Quickly inject the newly prepared sodium borohydride aqueous solution (0.01M, 1mL) into the above solution, and shake vigorously for 5 minutes. Use after 2 hours at room temperature.

[0054] (2) Take cetyltrimethylammonium bromide CTAB solution (0.1M, 4mL), slowly add dodecylbenzenesulfonic acid solution (0.05M, 4mL), add chloroauric acid solution (0.01M, 2mL ), added silver nitrate solution (0.01M, 0.4mL), then added hydrochloric acid solution (1M) to adjust the pH of the solution to 1.9, added ascorbic acid solution (0.1M, 0.32mL), and stabilized at room temperature for a certain period of time to obtain a colorless solution. Finally, 0.1 mL of the gold seed solution prepared in step (1) of aging for 2 hours was quickly injected into the growth solution, and grown at 20°C for 24 hours to obtain gold nanorods, 20*80nm.

[0055] (3) The templa...

Embodiment 2

[0057] Mix 0.1 ml of 25 mM chloroauric acid aqueous solution with 10 ml of 0.1 M dodecyltrimethylammonium bromide solution evenly. Take the newly prepared aqueous solution of sodium borohydride, 0.01M, 0.6mL and quickly inject it into the above solution, and shake vigorously for 2 minutes. Use after 2 hours at room temperature.

[0058] Dissolve 0.6g of dodecyltrimethylammonium chloride in 25ml of water. Constant temperature 30 degrees Celsius. Inject 0.5ml of 10mM silver nitrate solution, add 1ml of 25mM chloroauric acid solution, add 24ml of water, and stir at 30°C for 15min. The pH was adjusted to 2 by adding appropriate HCl. Add 80 microliters of 1M ascorbic acid under vigorous stirring, and stir for 30 seconds. Quickly inject 80 μl of the above seed solution. After stirring for 30s. Stand still for 12h. Nanorods of 80*38nm were obtained.

[0059] The template prepared by nanoimprinting (pore diameter 50 nm, pore depth 70 nm, honeycomb configuration) was cut into 5...

Embodiment 3

[0061] The SERS substrate that embodiment 1 obtains is soaked in 10 -4 mol / L pyridine solution for 30min, take it out and dry it in the air. Different points of the substrate were tested and obtained as image 3 The SERS spectrum of pyridine.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
depthaaaaaaaaaa
diameteraaaaaaaaaa
depthaaaaaaaaaa
Login to View More

Abstract

The invention provides a SERS chip including a substrate with a plurality of pits on the surface and a nanostructure unit arranged in the pits. The nanostructure unit includes one or more metal nanorods, and the upper part of the metal nanorods protrudes from the pits. In the present invention, one end of the metal nanorod is exposed to the pit, and the exposed SERS active material has high uniformity and stability. The preparation method of the present invention is simple, high in efficiency, low in cost, and can produce high-performance SERS on a large scale. Chips can well meet the needs of commercialization. The SERS chip prepared by the invention has high repeatability, uniform hot spots, stable properties, large-area growth and high sensitivity.

Description

technical field [0001] The invention relates to Surface-Enhanced Raman Scattering (SERS) technology, in particular to a method for preparing a SERS chip. Background technique [0002] Raman spectroscopy is a kind of scattering spectrum. Raman spectroscopy is based on the Raman scattering effect discovered by Indian scientist C.V. Raman (Raman). It analyzes the scattering spectrum different from the incident light frequency to obtain molecular vibration and rotation. information and is an analytical method applied to the study of molecular structures. This technology is widely used in various fields such as chemistry, physics, biology and medicine because of its fast, simple, repeatable and non-destructive qualitative and quantitative analysis advantages. It is used in pure qualitative analysis, highly quantitative analysis and determination of molecular structure. It also shows unique advantages. SERS enhancement sources include noble metal sols and enhancement substrates....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityPatents(China)
IPC IPC(8): G01N21/65
CPCG01N21/658
Inventor孙海龙郭清华
Owner苏州英菲尼纳米科技有限公司