Sensitive amplifier circuit, memory and signal amplification method

A technology of a sense amplifier and circuit, applied in the electrical field, can solve the problems such as weakening of the sensing efficiency of the target sense amplifier SA_T, sensing misoperation, etc., so as to achieve the effect of improving the overall sensing efficiency and reducing the coupling noise of the bit line

Pending Publication Date: 2019-01-08
CHANGXIN MEMORY TECH INC
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Problems solved by technology

If the sensing signal of the target sense amplifier SA_T is opposite to that of the adjacent sense amplifier SA_N1 or SA_N2, the strongest coupling effect will be produced, which will weaken the sensing performance of the target sense amplifier SA_T, and in severe cases will cause a sense erroneous action

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  • Sensitive amplifier circuit, memory and signal amplification method
  • Sensitive amplifier circuit, memory and signal amplification method
  • Sensitive amplifier circuit, memory and signal amplification method

Examples

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Embodiment Construction

[0052] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0053] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, for example, according to the description in the accompanying drawings directions for the example described above. It will be appreciated that if the illustrated device is turned over so...

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Abstract

The invention relates to a sensitive amplifier circuit, a memory and a signal amplification method. The sensitive amplifier circuit in the embodiment of the invention comprises: a sensitive amplifier,one end of which is connected with a first data line and the other end of which is connected with a second data line; a first semiconductor switching element having a first terminal connected to a first bit line, a second terminal connected to the first data line, and a control terminal receiving a first control signal, wherein the first semiconductor switching element changes the on degree according to the first control signal and the signal transmitted by the first bit line; and a second semiconductor switching element having a first terminal connected to a second bit line, a second terminal connected to a second data line, and a control terminal receiving a second control signal, wherein the second semiconductor switching element changes the opening degree according to the second control signal and the signal transmitted by the second data line. The sensitive amplifier circuit reduces bit line coupling noise and improves overall sensing efficiency.

Description

technical field [0001] The present disclosure relates to the field of electrical technology, in particular to a sensitive amplifier circuit, a memory and a signal amplification method. Background technique [0002] Sensitive amplifier (Sense Amplifier, referred to as SA) is a functional device used in semiconductor memory. Turning on the sense amplifier at an appropriate time point can amplify the weak signal stored in the storage unit, so that the data stored in the storage unit can be written or read correctly. [0003] refer to Figure 1A As shown, when the traditional sense amplifier is sensing, due to the coupling capacitance C between adjacent bit lines (Bit Line) BL-BL , the sensing signal of the target bit line BL_T will be affected by the sensing signals of the adjacent bit line BL_N1 and the adjacent bit line BL_N2, resulting in Figure 1B The non-ideal effect shown is called bit line coupling noise (Bit Line Coupling Noise). If the sensing signal of the target ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/06G11C7/08
CPCG11C7/062G11C7/08
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
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