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Silicon wafer pressure sensor with high overpressure capability

A pressure sensor, diaphragm technology, applied in the direction of measuring fluid pressure through electromagnetic elements, measuring fluid pressure, instruments, etc., can solve problems such as crushing

Active Publication Date: 2021-05-25
ROSEMOUNT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, sensors with this crystalline structure have limited overpressure capability, and excessive pressure on the sensor diaphragm can lead to large tensile stresses that exceed the maximum fracture strength of the crystalline structure
Failure of such sensors is often catastrophic, often resulting in a completely broken structure

Method used

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  • Silicon wafer pressure sensor with high overpressure capability
  • Silicon wafer pressure sensor with high overpressure capability
  • Silicon wafer pressure sensor with high overpressure capability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Various embodiments provide a pressure sensor with a crystalline diaphragm, wherein the pressure sensor includes an overpressure boss and uses hydrostatic loading on the sides of the diaphragm and on the top of the diaphragm to limit tensile stress on the diaphragm.

[0024] According to various embodiments, there is provided figure 1 The pressure sensor 200 includes a diaphragm 202 mounted to a base 203 at a bonding portion (eg, bonding portions 250 and 252 of the diaphragm 202). High pressure contact portions on the diaphragm 202 and / or base 203, such as bosses 205 and 207, interact with each other to act upon the outer top surface 218 and outer sides of the diaphragm 202 when a hydrostatic pressure load above a threshold is applied. Movement of a portion of the diaphragm 202 is inhibited against surfaces such as sides 206 and 208 . The lateral hydrostatic loads applied to sides 206 and 208 are shown by arrows 210 , 212 , 214 and 216 . The contact between the diaphr...

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PUM

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Abstract

A sensor (200) comprising a diaphragm (202) having a joint portion and a main boss separated from the joint portion (250, 252) by at least one channel The main boss (205) has a first side, a second side and a chamfered corner surface connecting the first side to the second side. The base (203) of the sensor has a first contact area (207) aligned with and spaced from the main boss (205), wherein the bonding portion (250, 252) of the diaphragm is bonded to base. At least one sensing element senses movement of the diaphragm (202).

Description

technical field [0001] This disclosure relates to pressure sensors. In particular, the present disclosure relates to pressure sensors with overpressure protection. Background technique [0002] In many pressure sensors, the diaphragm moves relative to the base in response to pressure applied to the top of the flexible diaphragm. Preferably, the diaphragm provides repeatable monotonic movement in response to applied pressure. As a result, crystalline diaphragms, such as those made of crystalline silicon, have been widely used because they provide monotonic motion in response to applied pressure and generally have no hysteresis effects. Unfortunately, sensors with such crystalline structures have limited overpressure capability, and excessive pressure on the sensor diaphragm can lead to large tensile stresses that exceed the maximum fracture strength of the crystalline structure. The failure of such sensors is often catastrophic, often resulting in a completely broken struc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L9/00G01L19/06
CPCG01L9/0042G01L9/0047G01L19/0618
Inventor 查理斯·R·威尔科克斯尼古拉斯·E·迈耶
Owner ROSEMOUNT INC