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A dual-notch ultra-wideband antenna

An ultra-wideband antenna and double-notch technology, which is applied in the field of double-notch ultra-wideband antennas, can solve problems such as insufficient radiation stability, achieve a good notch effect, improve stability, and increase the effect of the minimum value of peak gain

Active Publication Date: 2020-11-24
SOUTH CHINA NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the main problem of various notched UWB antennas is that their radiation stability is not enough, especially in the low-frequency non-notched frequency band (4-5GHz), the gain is often lower than that of the high-frequency part
The minimum gain value of the double-notch ultra-wideband antenna in the existing public technology on the 4-5GHz frequency band is about 2dB-3dB

Method used

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  • A dual-notch ultra-wideband antenna
  • A dual-notch ultra-wideband antenna
  • A dual-notch ultra-wideband antenna

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Embodiment Construction

[0033] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0034] like figure 1 , figure 2 As shown, this embodiment provides a dual-notch ultra-wideband antenna, including a rectangular radiation patch 1, a slotted rectangular floor 2, a feed microstrip line 3, a short-circuit microstrip line 4, a coupling patch 5, and a WiMAX frequency band trap Wave structure 6, WLAN frequency band notch structure and dielectric substrate 8, rectangular radiation patch 1 and slotted rectangular floor 2 are separated, feeding microstrip line 3 is separated from slotted rectangular floor 2, short-circuited microstrip line 4 Connected with the rectangular radiation patc...

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Abstract

The invention discloses a double-notch ultra-wideband antenna, which comprises a radiation patch, a slotted floor, a feed microstrip line, a short-circuit microstrip line, a coupling patch, a WiMAX-band notch structure and a WLAN-band notch structure, wherein the radiation patch is spaced apart from the slotted floor; the feed microstrip line is spaced apart from the slotted floor; the short-circuit microstrip line is connected to the radiation patch and the slotted floor; the coupling patch is disposed in a gap of the radiation patch and the slotted floor; the WiMAX-band notch structure and the WLAN-band notch structure are both arranged on the slotted floor; the WiMAX-band notch structure uses an asymmetric U-shaped slot; and the WLAN-band notch structure uses 7-shaped and 1-shaped slots. The double-notch ultra-wideband antenna improves the peak gain of a low-frequency non-notch-band under the premise of satisfying a good notching effect of the antenna in the WiMAX band and the WLANband, thereby improving the gain stability of the antenna over the entire ultra-wide band.

Description

technical field [0001] The invention belongs to the technical field of antennas, and in particular relates to a double-notch ultra-wideband antenna. Background technique [0002] Ultra-wideband technology is a new type of wireless communication technology with great development potential developed after the 1990s. It uses nanosecond-level non-sinusoidal narrow pulses to transmit data, so it occupies a wide spectrum. UWB technology has many advantages, according to the Shannon channel capacity formula: [0003] [0004] In the formula, C is the channel transmission rate (b / s), B is the channel bandwidth (Hz), S is the signal power (w), and N is the noise power (w). It can be seen from the formula that, under the condition that the channel signal-to-noise ratio remains unchanged, expanding the channel bandwidth can linearly increase the channel transmission rate. Under the condition that the transmission power remains unchanged, the power spectral density of the transmitt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01Q1/36H01Q1/48H01Q1/50H01Q5/20H01Q5/314H01Q5/50
CPCH01Q1/36H01Q1/48H01Q1/50H01Q5/20H01Q5/314H01Q5/50
Inventor 何赛灵罗淼辉刘辉李俊龙
Owner SOUTH CHINA NORMAL UNIVERSITY
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