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A kind of graphene powder and preparation method thereof

A technology of graphene powder and protective gas, applied in the field of graphene, can solve the problems of low purity, poor quality, and many graphene impurities, and achieve the effect of simple process flow and high quality

Active Publication Date: 2021-01-29
BEIJING GRAPHENE INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Overall, the graphene dispersion obtained by liquid phase exfoliation requires complex post-processing, and the prepared graphene has problems such as excessive impurities, low purity, and poor quality; while the bottom-up method mainly focuses on In chemical vapor deposition, the continuous preparation of graphene film can be realized (Bae.S., etal.Nat.Nanotech 2010, 5, 574), but it is still inseparable from the assistance of catalyst or substrate, and the subsequent transfer process requires high technical requirements and is easy Bring pollution, but also reduce the quality of graphene
[0005] All in all, the various preparation methods mentioned above cannot fully meet the practical needs. In order to realize the commercial application of powder graphene, from the perspective of growth preparation, a simple and efficient method for growing high-quality powder graphene is explored. Still a big problem to be solved

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  • A kind of graphene powder and preparation method thereof
  • A kind of graphene powder and preparation method thereof
  • A kind of graphene powder and preparation method thereof

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preparation example Construction

[0035] The method for preparing graphene powder according to one embodiment of the present invention includes: preparing graphene powder through a chemical vapor deposition process without using a substrate, wherein the reaction temperature in the chemical vapor deposition process is 1200-2000°C, for example 1250°C, 1300°C, 1350°C, 1400°C, 1450°C, 1500°C, 1550°C, 1600°C, 1650°C, 1700°C, 1750°C, 1800°C, 1850°C, 1900°C, 1950°C, etc.

[0036] In one embodiment, the reaction temperature during the chemical vapor deposition process is 1500˜1600° C.

[0037] refer to figure 1 , the preparation method of the graphene powder of one embodiment of the present invention comprises the following steps:

[0038] S1: Provide chemical vapor deposition system and graphene powder collection device;

[0039] S2: Pass protective gas into the heating zone in the furnace tube of the chemical vapor deposition system to raise the temperature;

[0040] S3: Introducing a carbon source into the heati...

Embodiment 1

[0069] Feed argon and hydrogen into the three-temperature-zone tube furnace of the high-temperature chemical vapor deposition system. The flow rate of argon gas is 300 sccm, and the flow rate of hydrogen gas is 100 sccm; Adjust it to 50 sccm, increase the flow rate of argon gas to 2000 sccm, feed methane to react, and the methane flow rate is 10 sccm; during the reaction process, the temperature in the first temperature zone is kept at 1200°C, the temperature in the reaction zone is kept at 1600°C, and the temperature in the third temperature zone is kept at 1600°C. The temperature of the zone was maintained at 1200°C. After 10 minutes, the membrane filter obtained Figure 2A The black graphene powder shown.

[0070] Figure 2B It is the SEM figure of the graphene powder obtained in embodiment 1, from which the morphology of graphene can be generally seen; Figure 2C It is the TEM image of the graphene powder obtained in Example 1, the sheet structure of graphene can be cle...

Embodiment 2

[0072] Feed argon and hydrogen into the three-temperature-zone tube furnace of the high-temperature chemical vapor deposition system. The flow rate of argon gas is 300 sccm, and the flow rate of hydrogen gas is 100 sccm; Adjust it to 100 sccm, increase the argon flow rate to 2000 sccm, feed methane to react, and the methane flow rate is 10 sccm; during the reaction process, the temperature in the first temperature zone is kept at 1200°C, the temperature in the reaction zone is kept at 1600°C, and the third temperature zone is kept at 1600°C. The temperature of the zone was maintained at 1200°C. After 10 minutes, black graphene powder was obtained on the filter membrane. Among them, the characterization results are as Figure 3A , 3B shown.

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Abstract

The invention provides graphene powder and a preparation method thereof. The method is characterized in that no substrate is used, and the graphene powder is prepared through a chemical vapor deposition process, wherein the reaction temperature during the chemical vapor deposition process is 1200-2000 DEG C. According to the preparation method of the graphene powder provided by one embodiment of the invention, the process flow is simple, and the high-quality graphene powder can be prepared.

Description

technical field [0001] The invention relates to graphene, in particular to a graphene powder and a preparation method thereof. Background technique [0002] Graphene in its ideal form is a two-dimensional honeycomb material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. As a future-oriented star material, graphene has broad application prospects in various fields. Therefore, its preparation method has always attracted everyone's attention. [0003] In 2004, Professor Geim and Dr. Novoselov prepared single-layer graphene by exfoliating highly oriented pyrolytic graphite as raw material through the "tape stripping method" (K.S. Novoselov, et al. Science 2004, 306, 666). Since then, the rich properties of this material in terms of morphology, mechanical properties, optical properties, and electrical properties have stimulated great interest in the scientific and industrial communities. [0004] In order to further expand the application of powde...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186
CPCC01B2204/04C01B2204/30C01B2204/32C01B32/186
Inventor 张锦许世臣高振飞孙阳勇刘海舟
Owner BEIJING GRAPHENE INST