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Selective Cyclic Dry Etching Process Using Plasma-Modified Dielectric Materials

A plasma-selective technology, applied in metal material coating process, circuit, crystal growth, etc., can solve problems such as difficulty in precise control of etching selectivity and uniformity

Active Publication Date: 2021-07-23
ASM IP HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

RIE is beneficial for etching thick dielectrics (>100nm) due to the high etch rate, but precise control of etch selectivity and uniformity is relatively difficult for thin dielectrics (<100nm)

Method used

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  • Selective Cyclic Dry Etching Process Using Plasma-Modified Dielectric Materials
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  • Selective Cyclic Dry Etching Process Using Plasma-Modified Dielectric Materials

Examples

Experimental program
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Effect test

example 1

[0066] In some embodiments, a film comprising a first SiC surface and a second SiO surface is dry etched by first subjecting the surface to a H-containing or N-containing plasma to form a modified layer on the SiC surface. The modified layer is formed on SiC rather than SiO. Using XeF 2 or NbF 5 The gas performs thermal etching to etch the modified layer. And after ten atomic layer etch cycles, SiC has high selectivity to the etch thickness of SiN.

example 2

[0068] In some embodiments, by using H 2 or NH 3 The plasma forms the modified layer to dry etch the film containing the first SiCN surface and the second SiN surface. by XeF 2 The gas performs thermal etching to etch the modified layer. Modified layers are formed on SiCN and SiN. After twenty atomic layer etch cycles, SiCN is highly selective to the etch thickness of SiN.

example 3

[0070] Using a set of starting layers of: SiN ALD layer, about 30 nm thick; SiO ALD layer, about 25 nm thick; SiC PECVD, about 40 nm thick; and SiCOH PECVD, about 200 nm thick, these layers were subjected to H 2 Plasma treatment and SF 6 Plasma etching: a) 1st half cycle, CCP H 2 Plasma modification (60 sec exposure) at 100MHz, 100W, 100sccm, 2Pa; b) 2nd half cycle, microwave SF 6 Plasma at 2.45 GHz, 50 W, 50 sccm, 2 Pa (radicals only), where a and b are separated by pumping / sweeping steps, and where the substrate temperature is 25°C. result in image 3 Shown in , demonstrating selective etching between layers. exist image 3 The self-limiting behavior of the etching process as a function of exposure to F radicals can also be observed in . For SiN layers, the surface oxide needs to be removed for etching.

[0071] By not removing surface oxides from such layers, etch selectivity between SiN and other carbon (and / or nitrogen) containing layers can also be improved.

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Abstract

In some embodiments, selectively cyclically (optionally dry) etching the first surface of the substrate relative to the second surface of the substrate by chemical atomic layer etching in the reaction chamber comprises using a first plasma to form a modified properties and etch the modified layer. The first surface comprises carbon and / or nitride and the second surface does not comprise carbon and / or nitride.

Description

technical field [0001] The present application relates to etching processes, and more particularly to selective etching processes of carbon-containing (and / or nitrogen-containing) materials relative to non-carbon (or non-nitride) materials. Background technique [0002] Such as SiO 2 Dielectric materials such as SiN and SiN have been used in semiconductors as interlayer dielectrics for interconnects, diffusion barriers, and etch hard masks. Traditional etching processes rely heavily on reactive ion etching (RIE). RIE is beneficial for etching thick dielectrics (>100nm) due to the high etch rate, but for the etching of thin dielectrics (<100nm), precise control of etch selectivity and uniformity is relatively difficult. Contents of the invention [0003] In some embodiments, selectively cyclically etching the first surface of the substrate relative to the second surface of the substrate in the reaction chamber by chemical atomic layer etching includes forming the mo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/033
CPCH01L21/0334H01L21/31116H01L21/0337H01L21/3065H01L21/02126H01L21/02172H01L21/67069H01L21/32137C23C16/0245B81C1/00595C30B31/00C30B33/08C30B33/12H01L21/31127H01L21/3081H01L21/31053H01L21/31105
Inventor R·H·J·沃乌尔特小林伸好堤隆嘉堀胜
Owner ASM IP HLDG BV