Selective cyclic dry etching process of dielectric materials using plasma modification
A plasma and dry etching technology, applied in the direction of metal material coating process, circuit, crystal growth, etc., can solve problems such as difficulty in precise control of etching selectivity and uniformity
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example 1
[0066] In some embodiments, a film comprising a first SiC surface and a second SiO surface is dry etched by first subjecting the surface to a H-containing or N-containing plasma to form a modified layer on the SiC surface. The modified layer is formed on SiC rather than SiO. Using XeF 2 or NbF 5 The gas performs thermal etching to etch the modified layer. And after ten atomic layer etch cycles, SiC has high selectivity to the etch thickness of SiN.
example 2
[0068] In some embodiments, by using H 2 or NH 3 The plasma forms the modified layer to dry etch the film containing the first SiCN surface and the second SiN surface. by XeF 2 The gas performs thermal etching to etch the modified layer. Modified layers are formed on SiCN and SiN. After twenty atomic layer etch cycles, SiCN is highly selective to the etch thickness of SiN.
example 3
[0070] Using a set of starting layers of: SiN ALD layer, about 30 nm thick; SiO ALD layer, about 25 nm thick; SiC PECVD, about 40 nm thick; and SiCOH PECVD, about 200 nm thick, these layers were subjected to H 2 Plasma treatment and SF 6 Plasma etching: a) 1st half cycle, CCP H 2 Plasma modification (60 sec exposure) at 100MHz, 100W, 100sccm, 2Pa; b) 2nd half cycle, microwave SF 6 Plasma at 2.45 GHz, 50 W, 50 sccm, 2 Pa (radicals only), where a and b are separated by pumping / sweeping steps, and where the substrate temperature is 25°C. result in image 3 Shown in , demonstrating selective etching between layers. exist image 3 The self-limiting behavior of the etching process as a function of exposure to F radicals can also be observed in . For SiN layers, the surface oxide needs to be removed for etching.
[0071] By not removing surface oxides from such layers, etch selectivity between SiN and other carbon (and / or nitrogen) containing layers can also be improved.
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