Three-dimensional memory device with epitaxially grown semiconductor channel and method of forming same

Abstract

Embodiments of 3D memory devices and methods of forming the same are disclosed. In an example, a three-dimensional (3D) memory device includes a substrate, a memory stack overlying the substrate and including alternating conductive and dielectric layers, and a memory string extending vertically through the memory stack. The memory string includes a single-crystal silicon plug in a lower portion of the memory string, a memory film over the single-crystal silicon plug and along a sidewall of the memory string, and a memory film over the memory film and along a sidewall of the memory string. monocrystalline silicon channel.

Description

technical field [0001] Embodiments of the present disclosure relate to three-dimensional (3D) memory devices and fabrication methods thereof. Background technique [0002] Planar memory cells have been shrunk to smaller sizes by improving process technology, circuit design, programming algorithms, and fabrication techniques. However, as the feature size of memory cells approaches the lower limit, planar processing and fabrication techniques become more difficult and costly. As a result, the storage density of planar memory cells approaches the upper limit. [0003] 3D memory architectures can address density limitations in planar memory cells. A 3D memory architecture includes a memory array and peripheral devices for controlling signals to and from the memory array. Contents of the invention [0004] Embodiments of 3D memory devices and methods of forming the same are disclosed herein. [0005] In one example, a three-dimensional (3D) memory device includes a substrat...

AI Technical Summary

Problems solved by technology

However, planar processing and fabrication techniques become more difficult and costly as memory cell feature sizes approach lower limits

As a result, the storage density of planar memory cells approaches the upper limit

Images