Lower electrode device and reaction chamber

Abstract

The invention provides a lower electrode device and a reaction chamber, including an electrode plate, the electrode plate includes a plurality of sub-plates, and by loading different bias powers to the multiple sub-plates, the substrate corresponding to the multiple sub-plates can be adjusted. Etch uniformity across multiple areas. The lower electrode device provided by the present invention can also be applicable to different process requirements while meeting the requirements of etching uniformity.

Description

technical field [0001] The invention relates to the field of microelectronics manufacturing, in particular, to a lower electrode device and a reaction chamber. Background technique [0002] At present, in the field of microelectronics manufacturing, due to the excellent directionality and selectivity of the plasma process, it has become the best choice for the manufacture of microelectronic devices and has been widely used. The surface of the substrate is etched, and after the plasma etching process, the uniformity of the amount of etching on the surface of the substrate is a key indicator for testing the quality of the plasma etching process. [0003] like figure 1 As shown, an existing plasma chamber includes a reaction chamber 11, a coil 12, a plasma 13 and a lower electrode plate 14. During the etching process, a process gas is introduced into the reaction chamber 11, and the coil 12. Load the radio frequency power supply, excite the process gas into plasma 13, and loa...

AI Technical Summary

Problems solved by technology

[0004] However, in order to meet the requirements of etching uniformity, the power ratio of the RF power loaded on the coil 12 and the lower electrode 14 can only be kept within a specific range, which brings great challenges to the application of the etching process. Limitations. In practical applications, in order to meet different process requirements, the RF power supplies on the coil 12 and the lower electrode 14 need to be loaded with different powers, which will cause the specific power ratio range to be exceeded, and the etching uniformity requirements cannot be met.

Images