Lower electrode device and reaction chamber

Abstract

The invention provides a lower electrode device and a reaction chamber. The lower electrode device comprises an electrode plate, the electrode plate comprises a plurality of sub-electrode plates, andetching uniformity of a plurality of areas of a substrate corresponding to the plurality of sub-electrode plates is adjusted by loading different bias power to the plurality of sub-electrode plates. According to the invention, when the etching uniformity requirement is satisfied, different process requirements are met.

Description

technical field [0001] The invention relates to the field of microelectronics manufacturing, in particular to a lower electrode device and a reaction chamber. Background technique [0002] At present, in the field of microelectronics manufacturing, due to the excellent directionality and selectivity of the plasma process, it has become the best choice for the manufacture of microelectronic devices and has been widely used. It bombards the surface of the substrate with plasma, thereby The surface of the substrate is etched, and after the plasma etching process, the uniformity of the etching amount on the substrate surface is a key indicator for testing the quality of the plasma etching process. [0003] like figure 1 As shown, an existing plasma chamber includes a reaction chamber 11, a coil 12, a plasma 13 and a lower electrode plate 14. When performing an etching process, the process gas is passed into the reaction chamber 11, and the coil 12 Load a radio frequency power ...

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Problems solved by technology

[0004] However, in order to meet the requirements of etching uniformity, the power ratio of the RF power loaded on the coil 12 and the lower electrode 14 can only be kept within a specific range, which brings great challenges to the application of the etching process. Limitations. In practical applications, in order to meet different process requirements, the RF power supplies on the coil 12 and the lower electrode 14 need to be loaded with different powers, which will cause the specific power ratio range to be exceeded, and the etching uniformity requirements cannot be met.

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