Chamber structure applied to plasma equipment and plasma equipment

Abstract

The invention discloses a chamber structure applied to plasma equipment and the plasma equipment. The chamber structure comprises a radio frequency coil, a quartz coupling window, a chamber, a substrate and a lower electrode, wherein the radio frequency coil is arranged on the upper part of the quartz coupling window; the quartz coupling window is arranged on the upper part of the chamber; the substrate is arranged on the upper part of the lower electrode; the substrate and the lower electrode are arranged on the lower part of the chamber; a plasma focusing structure is arranged in the chamber and is arranged on the lower part of plasma arranged in the chamber for controlling fluid distribution of the plasma; the magnetic member is connected with the plasma focusing structure for applying a magnetic field. According to the embodiment of the invention, by providing the chamber structure applied to the plasma equipment and the plasma equipment, the fluid distribution of the plasma can be controlled, so the surface reaction of the plasma and a product is fuller, and the qualification rate and the yield of the product are improved.

Description

technical field [0001] The invention relates to the field of plasma technology, in particular to a chamber structure applied to plasma equipment and the plasma equipment. Background technique [0002] With the rapid development of plasma technology, large-area and high-density plasma sources, such as ECR, ICP and TCP plasma, are used in the manufacture of large-scale integrated circuits. The manufacturing process will be affected by plasma density, electron temperature, and gas flow. And the impact of parameters such as reaction temperature, and then by controlling the hardware parameters and process parameters of the plasma equipment, the product can be processed with better process conditions, so that the pass rate and yield of the product are higher. [0003] When the existing plasma equipment is processing the product, the product is usually placed in the chamber structure of the plasma equipment for plasma reaction, while the existing chamber structure such as figure 1...

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Problems solved by technology

[0004] However, in the chamber structure of the existing plasma equipment, the product is arranged on the substrate 13, and there is a vacuum between the substrate 13 and the plasma 15, so that when the plasma 15 reacts with the surface of the product, the plasma 15 The density is constant, resulting in the inability to accurately control the corresponding local process performance capabilities such as etching speed and etching uniformity

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