An Integrated High Extinction Ratio Infrared Circular Polarization Detector and Its Design Method

An extinction ratio and detector technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as the inability to realize infrared circular polarization detection, improve light absorption rate and quantum efficiency, improve circular polarization extinction ratio, and stability and high reliability

Active Publication Date: 2021-10-01
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The purpose of the present invention is to propose an integrated high extinction ratio infrared circular polarization detector and design method to solve the problem that traditional infrared detectors cannot realize infrared circular polarization detection

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  • An Integrated High Extinction Ratio Infrared Circular Polarization Detector and Its Design Method
  • An Integrated High Extinction Ratio Infrared Circular Polarization Detector and Its Design Method
  • An Integrated High Extinction Ratio Infrared Circular Polarization Detector and Its Design Method

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Embodiment example

[0038] The quantum well circular polarization detector in this implementation case is aimed at a detection wavelength of 12 μm, and the metal is gold. The chiral metamaterial is a "Z" type metal grating. Through electromagnetic simulation optimization, the structural size of the periodic unit is Px=3.85μm, Py=3μm, W 1 =0.6μm, W 2 =1μm, L=2.5μm, h 1 = 50nm.

[0039] The quantum well layer contains 9 periods of GaAs / Al 0.55 Ga 0.45 As material with a thickness of 66.5nm per period including 60nm of Al 0.55 Ga 0.45 As potential barrier layer and 6.5nm GaAs potential well layer. The upper electrode layer and the lower electrode layer are GaAs with a thickness of 200nm. The metal reflection layer is a gold thin film with a thickness of 100-200nm.

[0040] figure 2 is the dielectric function of the quantum well in the z direction. The absorption and circular polarization extinction of the quantum well layer obtained by optimizing the structure size through electromagneti...

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Abstract

The invention discloses an integrated infrared circular polarization detector with high extinction ratio and a design method. The structure includes a metal reflection layer, a lower electrode layer, a quantum well layer, an upper electrode layer, and a two-dimensional chiral metamaterial layer. Under a certain incident light rotation, surface plasmons are formed at the interface between the metamaterial layer and the quantum well layer, and the main electric field direction coincides with the absorption direction of the quantum well, thereby enhancing the absorption of the quantum well. In the case of another optical rotation, most of the optical power is reflected, and the surface plasmons cannot be effectively excited, and the absorption of the quantum well is very low, thereby realizing the detection capability of infrared circular polarization with high extinction ratio.

Description

technical field [0001] The invention relates to an integrated infrared circular polarization detector and a design method thereof, in particular to a high extinction ratio quantum well infrared circular polarization detector integrated with a chiral mirror surface material and a design method thereof. Background technique [0002] Infrared circular polarization detection has important application value in many key fields related to national economy and people's livelihood. First of all, in terms of anti-interference imaging, circular polarization detection has attracted widespread attention due to its special effect of "penetrating clouds and fog". When circularly polarized light propagates in a cloud composed of tiny water particles, the randomization rate of the helicity is much smaller than the randomization rate of the propagation direction, so the circular polarization property is maintained. Secondly, after the circularly polarized light is directly reflected by the d...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/0304H01L31/0352
CPCH01L31/101H01L31/0304H01L31/03046H01L31/035236H01L31/02327H01L31/09H01L31/184
Inventor 周靖储泽世代旭余宇兰梦珂郭尚坤邓杰陈效双蔡清元李方哲嵇兆煜
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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