Three-dimensional vertical resistive memory array and its operation method, device, equipment and medium

Abstract

A three-dimensional vertical resistive memory array and its operation method, device, equipment and medium. The operation method includes: selecting a specific resistive variable memory in a three-dimensional vertical resistive variable memory array as a selected unit for programming operation. The above programming operation includes: respectively applying voltage V to the word line, bit line and selection line where the selected cell is located dd , 0 and V on1 ; Apply zero voltage to the selection line where the first unselected cell corresponding to a different selection line from the selected cell is located; and remove the selected cell from the word line and bit line corresponding to the second unselected cell corresponding to the same selection line as the selected cell Except for the word line and bit line, the other word lines apply the voltage V 1 , the rest of the bit lines apply a voltage of V 2 ; Among them, the voltage V 1 , V 2 Satisfy: make the voltage drop of all the second unselected cells less than V dd / 2. During the programming operation, the error programming operation caused by the voltage drop of the RRAM itself and the fluctuation of the corresponding programming voltage is overcome.

Description

technical field [0001] The present disclosure belongs to the field of semiconductor devices and integrated circuits, and relates to a three-dimensional vertical resistive memory array and its operation method, device, equipment and medium, in particular to a programming operation for reducing misprogramming and energy consumption of a three-dimensional vertical resistive memory array method and a read operation method that can independently read any unit (single or multiple) of the same word line / bit line, a three-dimensional vertical resistive memory array that performs the above operation method, an operating device that applies the above operation method, and also relates to Electronic devices and computer readable storage media. Background technique [0002] With the rapid development and popularization of mobile smart terminals and the Internet of Things, the number of electronic devices has increased dramatically, accompanied by the generation of huge data volumes, whi...

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Problems solved by technology

[0004] However, the selection of the programming voltage in the existing operation scheme still has a high misprogramming operation for unselected cells, which is very unfavorable for the development of high-performance storage and storage-computing integration.

In addition, the existing read operation schemes are all row / column parallel read, and cannot be read for a single or specific multiple devices

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