Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-dimensional vertical resistive memory array and its operation method, device, equipment and medium

A technology of resistive variable memory and operation method, which is applied in the direction of static memory, digital memory information, information storage, etc. It can solve the problems of high error programming operation of unselected cells, inability to read single or specific multiple devices, etc., to overcome error Effects of programming operations, avoiding misprogramming operations, and reducing the probability of misprogramming

Active Publication Date: 2022-05-17
PEKING UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the selection of the programming voltage in the existing operation scheme still has a high misprogramming operation for unselected cells, which is very unfavorable for the development of high-performance storage and storage-computing integration.
In addition, the existing read operation schemes are all row / column parallel read, and cannot be read for a single or specific multiple devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional vertical resistive memory array and its operation method, device, equipment and medium
  • Three-dimensional vertical resistive memory array and its operation method, device, equipment and medium
  • Three-dimensional vertical resistive memory array and its operation method, device, equipment and medium

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0045] The first exemplary embodiment of the present disclosure provides a method for operating a three-dimensional vertical resistive memory array, in which a specific resistive memory in the three-dimensional vertical resistive memory array is selected as a selected cell for programming operation.

[0046] combine first figure 1 The structure of the three-dimensional vertical resistive memory array of this embodiment is introduced.

[0047] The operation method of the present disclosure is applicable to a three-dimensional vertical resistive memory array. The three-dimensional vertical resistive variable memory array includes: a stacked structure in which planar conductor layers and insulating layers are stacked in sequence; a columnar electrode vertically penetrating the stacked structure; a resistive dielectric layer surrounding the periphery of the columnar electrode; between the stacked structure and the columnar The intersection of the electrodes forms a resistive vari...

no. 2 example

[0072] In the second exemplary embodiment of the present disclosure, a method for operating a three-dimensional vertical resistive memory array is provided, in which a specific resistive memory in the three-dimensional vertical structure resistive memory array or on the same word line is selected A specific plurality of RRAMs on the / bit line are used as selected cells to perform a read operation. The read operation method in this embodiment can perform read and write operations on the same device as the programming operation in the first embodiment, or can be implemented separately from the method in the first embodiment, and the read operation illustrated in this embodiment is implemented separately (read operation) or the write operation (program operation) exemplified in the first embodiment is implemented separately.

[0073] Figure 6 It is a flowchart of a read operation method of a three-dimensional vertical resistive memory array according to an embodiment of the pre...

no. 3 example

[0095] In a third exemplary embodiment of the present disclosure, a three-dimensional vertical resistive memory array is provided for performing the above operation method.

[0096] For example, as shown in reference 1, the three-dimensional vertical resistive variable memory array of this embodiment includes: a laminated structure in which planar conductor layers and insulating layers are stacked in sequence; columnar electrodes vertically penetrating through the laminated structure; resistive variable memory arrays surrounding the columnar electrodes Dielectric layer; a resistive variable memory comprising a planar conductor layer, a resistive dielectric layer and a columnar electrode formed at the intersection of the stacked structure and the columnar electrode, wherein the planar conductor layer and the columnar electrode are respectively used as the resistive variable memory The two electrodes of the two electrodes; at the same time, the planar conductor layer is used as a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A three-dimensional vertical resistive memory array and its operation method, device, equipment and medium. The operation method includes: selecting a specific resistive variable memory in a three-dimensional vertical resistive variable memory array as a selected unit for programming operation. The above programming operation includes: respectively applying voltage V to the word line, bit line and selection line where the selected cell is located dd , 0 and V on1 ; Apply zero voltage to the selection line where the first unselected cell corresponding to a different selection line from the selected cell is located; and remove the selected cell from the word line and bit line corresponding to the second unselected cell corresponding to the same selection line as the selected cell Except for the word line and bit line, the other word lines apply the voltage V 1 , the rest of the bit lines apply a voltage of V 2 ; Among them, the voltage V 1 , V 2 Satisfy: make the voltage drop of all the second unselected cells less than V dd / 2. During the programming operation, the error programming operation caused by the voltage drop of the RRAM itself and the fluctuation of the corresponding programming voltage is overcome.

Description

technical field [0001] The present disclosure belongs to the field of semiconductor devices and integrated circuits, and relates to a three-dimensional vertical resistive memory array and its operation method, device, equipment and medium, in particular to a programming operation for reducing misprogramming and energy consumption of a three-dimensional vertical resistive memory array method and a read operation method that can independently read any unit (single or multiple) of the same word line / bit line, a three-dimensional vertical resistive memory array that performs the above operation method, an operating device that applies the above operation method, and also relates to Electronic devices and computer readable storage media. Background technique [0002] With the rapid development and popularization of mobile smart terminals and the Internet of Things, the number of electronic devices has increased dramatically, accompanied by the generation of huge data volumes, whi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C13/00
CPCG11C13/0004G11C13/004G11C13/0069Y02D10/00
Inventor 黄鹏冯玉林刘力锋刘晓彦康晋锋
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products