Storage and calculation integrated ferroelectric memory and operation method thereof
A ferroelectric memory and ferroelectric storage technology, which is applied in the field of ferroelectric memory with integrated storage and computing, and can solve the problems of regular refresh, poor reliability, and easy aging
Active Publication Date: 2020-10-27
无锡舜铭存储科技有限公司
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Problems solved by technology
Among them, the solutions represented by resistive random access memory (ReRAM) have encountered various problems in the actual use process, including poor reliability, prone to defects, easy to aging, and need to be refreshed regularly, etc.
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[0059] It should be noted that components in the various figures may be shown exaggerated for the purpose of illustration and are not necessarily true to scale. In the various figures, identical or functionally identical components are assigned the same reference symbols.
[0060] In the present invention, unless otherwise specified, "arranged on", "arranged on" and "arranged on" do not exclude the presence of intermediates between the two. In addition, "arranged on or above" only means the relative positional relationship between two parts, and under certain circumstances, such as after the product direction is reversed, it can also be converted to "arranged under or below", and vice versa Of course.
[0061] In the present invention, each embodiment is only intended to illustrate the solutions of the present invention, and should not be construed as limiting.
[0062] In the present invention, unless otherwise specified, the quantifiers "a" and "an" do not exclude the scen...
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The invention relates to a storage and calculation integrated ferroelectric memory. Included are: a first computing unit, the ferroelectric storage device comprises N ferroelectric storage units, wherein N is an integer and N is greater than 1; wherein the gate of the transistor of each ferroelectric memory cell is connected to one of the N word lines, respectively, a ferroelectric memory cell ofwhich one of a source or a drain is connected to the first bit line, and the other of the source or the drain is connected to one end of the ferroelectric capacitor of the ferroelectric memory cell, and the other end of the ferroelectric capacitor of each ferroelectric memory cell is connected to one of the N plate lines, respectively; and a control circuit configured to be capable of being in a calculation mode or a storage mode. The invention also relates to a method for operating such a memory-arithmetic integrated ferroelectric memory. By means of the ferroelectric memory and / or the method, storage and calculation integration based on the ferroelectric memory can be achieved, that is, the same ferroelectric memory can achieve a storage function and can also achieve a calculation function.
Description
technical field [0001] The present invention generally relates to the field of semiconductors, and more specifically relates to a memory-computing integrated ferroelectric memory. Furthermore, the invention relates to a method for operating such a ferroelectric memory. Background technique [0002] Due to the memory wall problem of traditional computing architecture, the semiconductor industry has been actively exploring an integrated storage and computing solution centered on non-volatile memory. Among them, the solutions represented by resistive random access memory (ReRAM) have encountered various problems in the actual use process, including poor reliability, prone to defects, easy to aging, and need to be refreshed regularly. [0003] In recent years, ferroelectric memory, as a new type of memory with high write speed and high read and write times, has received more and more attention. Ferroelectric memory is a non-volatile memory of a special process. When an electr...
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IPC IPC(8): G11C11/22
CPCG11C11/221G11C11/2255G11C11/2257G11C11/223
Inventor 戴晓望方原陶谦林杰吕震宇
Owner 无锡舜铭存储科技有限公司