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A storage-computing integrated ferroelectric memory and its operating method

A ferroelectric memory and ferroelectric storage technology, which is applied in the field of ferroelectric memory such as integrated storage and calculation, can solve the problems of prone to defects, easy to aging, and need to be refreshed regularly

Active Publication Date: 2022-02-15
WUXI SMART MEMORIES TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the solutions represented by resistive random access memory (ReRAM) have encountered various problems in the actual use process, including poor reliability, prone to defects, easy to aging, and need to be refreshed regularly, etc.

Method used

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  • A storage-computing integrated ferroelectric memory and its operating method
  • A storage-computing integrated ferroelectric memory and its operating method
  • A storage-computing integrated ferroelectric memory and its operating method

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Embodiment Construction

[0059] It should be noted that each component in the drawings may be exaggerated for illustrative description, and it is not necessarily a ratio. In each of the drawings, the same components as the same or functionally equipped with the same reference numerals.

[0060] In the present invention, unless otherwise indicated, "arranged in ...", "arranged above" and "arranged above" and "above" are not excluded from the case where there is an intermediate. In addition, "arranged on or above" only indicates the relative positional relationship between the two components, and in a certain case, if it is reversed in the direction of the product, it can also be converted to "arranged under or below", but also Hereaway.

[0061] In the present invention, each of the embodiments are intended to illustrate the aspects of the invention, and it is not to be construed as limiting.

[0062] In the present invention, unless otherwise indicated, the quantifier "one", "a" "one" does not exclude the...

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Abstract

The present invention relates to a storage-computing integrated ferroelectric memory, comprising: a first calculation unit including N ferroelectric storage units, wherein N is an integer and N>1, wherein the gates of the transistors of each ferroelectric storage unit are respectively connected to to one of the N word lines, one of its source or drain is connected to the first bit line, and the other of its source or drain is connected to one end of the ferroelectric capacitor of the ferroelectric memory cell, and each The other ends of the ferroelectric capacitors of the ferroelectric memory cells are respectively connected to one of the N plate lines; and a control circuit configured to be able to be in a calculation mode or a storage mode. The invention also relates to a method for operating such a memory-computing integrated ferroelectric memory. Through the present invention, through the ferroelectric memory and / or the method, the integration of storage and calculation based on the ferroelectric memory can be realized, that is, the same ferroelectric memory can perform both the storage function and the calculation function.

Description

Technical field [0001] In particular, the present invention relates to the field of semiconductors, and more specifically, it relates to a calculated integrated ferroelectric memory. Furthermore, the invention also relates to a method for calculating such a ferroelectric memory. Background technique [0002] Due to the memory wall problem of traditional computing architecture, the semiconductor industry has been actively exploring a depot integrated solution with non-volatile memory as the core. A solution represented by the resistive random access memory (RERAM) has encountered various problems during the actual use, including differences in reliability, prone to defects, and negative aging, and requires regular refreshing. [0003] In recent years, the ferroelectric memory has received more and more attention as a new memory of high-write speed and high readout. The ferroelectric memory is a non-volatile memory of special processes. When the electric field is applied to the fer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/22
CPCG11C11/221G11C11/2255G11C11/2257G11C11/223
Inventor 戴晓望方原陶谦林杰吕震宇
Owner WUXI SMART MEMORIES TECH CO LTD