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Apparatuses and methods for controlling word drivers

A device and sub-word line technology, applied in the field of semiconductor memory, can solve the problems of increasing data degradation rate and so on

Pending Publication Date: 2020-12-25
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Repeated access to a particular subwordline (often referred to as "row ha

Method used

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  • Apparatuses and methods for controlling word drivers
  • Apparatuses and methods for controlling word drivers
  • Apparatuses and methods for controlling word drivers

Examples

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Embodiment Construction

[0019] Certain details are set forth below in order to provide a thorough understanding of examples of various embodiments of the present disclosure. It will be apparent, however, to one skilled in the art that the examples described herein may be practiced without these specific details. Furthermore, specific examples of the disclosure described herein should not be construed to limit the scope of the disclosure to those specific examples. In other instances, well-known circuits, control signals, timing schemes and software operations have not been shown in detail in order to avoid unnecessarily obscuring the embodiments of the present disclosure. Additionally, terms such as "couples / coupled" mean that two components may be electrically coupled, directly or indirectly. Indirect coupling can imply that two components are coupled through one or more intermediate components.

[0020] A semiconductor memory device may include main word lines and sub word lines in a hierarchical...

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Abstract

Apparatuses and methods for controlling the discharge of subword lines are described. The rate of discharge and/or the voltage level discharged to may be controlled. In some embodiments, a main word line may be driven to multiple low potentials to control a discharge of a subword line. In some embodiments, a first word driver line signal and/or a second word driver line signal may be reset to control a discharge of a subword line. In some embodiments, a combination of driving the main word line and the first word driver line signal and/or the second word driver line signal resetting may be used to control a discharge of the subword line.

Description

technical field [0001] The present application relates to a semiconductor memory, and more particularly to an apparatus and method for controlling word line discharge. Background technique [0002] A semiconductor memory device represented by a DRAM (Dynamic Random Access Memory) includes a memory cell array having memory cells arranged at intersections between word lines and bit lines. A semiconductor memory device may include main word lines and sub word lines in a hierarchical structure. The main word line is the word line located in the upper layer, and is selected by the first part of the row address. A sub word line is a word line located in a lower layer, and is selected based on a corresponding main word line (MWL) and a word driver line (FXL), which is selected by the second part of the row address. [0003] A memory cell array included in a semiconductor memory device (eg, DRAM) may be divided into a plurality of memory mats to reduce wiring capacitance of sub-wo...

Claims

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Application Information

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IPC IPC(8): G11C11/408
CPCG11C11/4085G11C5/025G11C8/08G11C8/14G11C11/4087G11C8/10
Inventor 佐藤敏行
Owner MICRON TECH INC