Programming method for semiconductor device and semiconductor device

A programming method and semiconductor technology, applied in the semiconductor field, can solve the problems of memory cell programming interference and attracting electrons, and achieve the effect of increasing the boost potential and improving the programming interference problem.

Active Publication Date: 2021-11-02
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When programming the memory cells in the memory string, it is necessary to input the programming voltage to the word line corresponding to the memory cell, and the high programming voltage will attract electrons in the channel of the dummy cell, causing the memory cell to be disturbed by programming.

Method used

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  • Programming method for semiconductor device and semiconductor device
  • Programming method for semiconductor device and semiconductor device
  • Programming method for semiconductor device and semiconductor device

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Embodiment Construction

[0041] Specific structural and functional details disclosed herein are representative only and for purposes of describing example embodiments of the present invention. This invention may, however, be embodied in many alternative forms and should not be construed as limited to only the embodiments set forth herein.

[0042] In describing the present invention, it is to be understood that the terms "central", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", The orientation or positional relationship indicated by "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the referred device Or elements must have a certain orientation, be constructed and operate in a certain orientation, and thus should not be construed as limiting the invention. In addition, the te...

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Abstract

The invention discloses a programming method for a semiconductor device and the semiconductor device. The semiconductor device includes a memory string, the memory string includes a plurality of first memory cells and first dummy cells stacked in sequence, each of the first memory cells is correspondingly connected to a word line, and the first dummy cells The gate of the first memory cell is connected to the first dummy word line; the method includes: in the precharge phase, inputting a precharge voltage to the word line corresponding to the programmed memory cell in the plurality of first memory cells, the programmed memory cell The unit is a storage unit between the storage unit to be programmed and the first dummy unit among the plurality of first storage units; in a programming phase, a programming voltage is input to a word line corresponding to the storage unit to be programmed. The embodiment of the present invention can reduce program disturb and increase boost potential.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a programming method for a semiconductor device and the semiconductor device. Background technique [0002] A memory string in a semiconductor device generally includes a memory cell and a dummy cell, and residual electrons may exist in a channel of the dummy cell. When programming a memory cell in a memory string, a programming voltage needs to be input to a word line corresponding to the memory cell, and a high programming voltage will attract electrons in a channel of a dummy cell, resulting in program interference at the memory cell. Contents of the invention [0003] The invention provides a programming method for a semiconductor device and the semiconductor device, which can reduce programming interference and increase boosting potential. [0004] The present invention provides a programming method for a semiconductor device. The semiconductor device includes a me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34G11C16/04G11C5/14G11C8/14
CPCG11C16/3427G11C16/0433G11C5/147G11C8/14G11C16/0483G11C16/10G11C16/32G11C16/08G11C16/102G11C16/28
Inventor 李楷威贾建权闵园园崔莹宋雅丽刘红涛贾信磊张安
Owner YANGTZE MEMORY TECH CO LTD
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