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Terahertz generator based on two-dimensional material phonon mode

A two-dimensional material and generator technology, applied in the field of electromagnetic waves, can solve problems such as large area of ​​action, limitation, increase in process complexity and cost, and achieve the effects of reduced light intensity, good directionality, and high energy conversion efficiency

Active Publication Date: 2021-07-27
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The strong scattering caused by the strong excitation in the photoconductive and inverse spin Hall effect emission mechanisms, and the various difference frequency components in the photorectification excitation pulse all make it difficult to achieve corresponding narrow-band or monochromatic terahertz radiation
In addition, the photoconductive antenna needs to prepare additional electrode structures on the basis of semiconductor materials, which increases the process complexity and cost to a certain extent; while the optical rectification effect is a nonlinear effect, a stronger laser is required to generate certain terahertz radiation excitation, and requires a large active area, which limits the integrated application of this terahertz source
These existing problems limit its application and development in corresponding key fields (such as communication, quantum computing, etc.)

Method used

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  • Terahertz generator based on two-dimensional material phonon mode
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Embodiment Construction

[0022] In the following, the technical solution of the present invention will be described in detail through specific embodiments, and many specific details are set forth in the following description so as to fully understand the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific implementation disclosed below.

[0023] Such as Figures 1 to 5 As shown, the present invention proposes a terahertz generator based on two-dimensional material phonon modes, including a low-energy broadband terahertz pulse generator 1, a terahertz monochromatic radiation generator 2 and a terahertz monochromatic radiation control A temperature control device for the temperature of the generator 2; the terahertz monochromatic radiation generator 2 inc...

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Abstract

The invention discloses a terahertz generator based on a two-dimensional material phonon mode. The terahertz generator comprises a low-energy broadband terahertz pulse generation device, a terahertz monochromatic radiation generator and a temperature control device used for controlling the temperature of the terahertz monochromatic radiation generator. The terahertz monochromatic radiation generator comprises a two-dimensional material layer and a high-transmission substrate, the two-dimensional material layer is loaded on the high-transmission substrate, broadband terahertz pulses emitted by the low-energy broadband terahertz pulse generation device sequentially pass through the two-dimensional material layer and the high-transmission substrate to output monochromatic terahertz radiation, and the efficient monochromatic terahertz radiation is achieved at the emitting end through the two-dimensional material layer of the terahertz generator.

Description

technical field [0001] The invention relates to the technical field of electromagnetic waves, in particular to a terahertz generator based on a two-dimensional material phonon mode. Background technique [0002] There are many ways to generate terahertz, but the more mature emission technologies are generally based on semiconductor photoconductive effect and nonlinear electro-optic crystal photorectification effect. Photoconductive technology uses dipole antenna technology to prepare semiconductor photoconductive materials (such as GaAs, InP or Si, etc.) A large number of electron-hole pairs, these excited carriers are accelerated instantaneously under the action of an external bias electric field on the antenna, generating a transient current with rapidly increasing intensity, and releasing the stored electrostatic potential energy in the form of electromagnetic pulses, And propagate to free space through the antenna structure. Another method is the light rectification me...

Claims

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Application Information

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IPC IPC(8): H01S1/02
CPCH01S1/02
Inventor 盛志高成龙
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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