Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor device manufacturing

Active Publication Date: 2021-08-06
XIA TAI XIN SEMICON QING DAO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, each photomask introduces additional cost, and additional reliability risk due to alignment / overlay challenges

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.

[0021] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the disclosure are shown. This disclosure may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. Throughout, like reference numerals refer to like elements.

[0022] The terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to be limiting of the present disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
critical dimensionaaaaaaaaaa
Login to View More

Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises the following components of: a first fin-shaped structure which is arranged on a substrate and is provided with a strip-shaped plane outline; and a first lead structure intersecting in an intermediate region of the first fin-shaped structure at a level lower than the topmost surface of the first fin-shaped structure.

Description

technical field [0001] The present disclosure relates generally to the fabrication of semiconductor devices and, more particularly, to providing control line structures for semiconductor devices such as random dynamic access memories (DRAMs). Background technique [0002] With the development of integrated circuits (ICs), the demand for higher device density and operating speed has become a never-ending pursuit of those skilled in the art. As the feature density in IC devices increases, the allowable critical dimensions of various device features shrink dramatically. To this end, advanced lithography techniques (e.g., multi-patterning lithography) or expensive fabrication equipment (e.g., extreme ultraviolet (EUV) lithography equipment) are often required, which increases manufacturing cost and process complexity . For example, multiple patterning techniques require multiple photomasks and multiple layers of etch masks to define high density features in a single device lay...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/538H01L27/108H01L29/10H01L21/8242H10B12/00
CPCH01L29/1033H01L23/5386H10B12/33H10B12/36H10B12/30H10B12/05H10B12/056H10B12/482
Inventor 金一球
Owner XIA TAI XIN SEMICON QING DAO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com