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Integrated circuit device

A technology of integrated circuits and devices, applied in the field of electronics, can solve problems such as line interference or electrical short circuit, small area, etc.

Pending Publication Date: 2021-08-06
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, stacked integrated circuit devices may have a smaller area for wires than non-stacked integrated circuit devices, which may lead to interference or electrical shorts between wires

Method used

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  • Integrated circuit device
  • Integrated circuit device
  • Integrated circuit device

Examples

Experimental program
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Embodiment Construction

[0035] A standard cell of an integrated circuit device may include a plurality of lines including, for example, an input line electrically connected to an input node, an output line electrically connected to an output node, and the Routing lines for electrical connection of components. The input line and the output line may be formed after forming the gate structure of the standard cell, and may be formed of metal. The routing line may be formed simultaneously with the input line and the output line, and may be provided at a height equal to that of the input line and the output line. Routing lines of standard cells can electrically connect elements of adjacent standard cells.

[0036] In some embodiments, the routing lines may be formed before the input and output lines are formed, and / or may be provided closer to the substrate than the input and output lines. Since the routing lines are provided at a height different from that of the input lines and the output lines, the wi...

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Abstract

Integrated circuit devices including standard cells are provided. The integrated circuit devices may include a lower transistor region and an upper transistor region. The lower transistor region may include a lower active region, lower source / drain regions, and lower gate structures arranged alternately with the lower source / drain regions. The upper transistor region may include an upper active region, upper source / drain regions, and upper gate structures arranged alternately with the upper source / drain regions. The upper gate structures may include a first upper gate structure. The integrated circuit devices may also include an input wire, an input via electrically connecting the input wire to the first upper gate structure, and a routing wire electrically connecting a pair of the lower source / drain regions or a pair of the upper source / drain regions. An upper surface of the routing wire may be closer to the substrate than an upper surface of the input wire.

Description

technical field [0001] The present disclosure relates generally to the field of electronics and, more particularly, to stacked integrated circuit devices. Background technique [0002] Stacked integrated circuit devices have been studied due to their high integration density. However, stacked integrated circuit devices may have a smaller area for wires than non-stacked integrated circuit devices, which may lead to interference or electrical shorts between wires. Contents of the invention [0003] According to some embodiments of the inventive concept, an integrated circuit device may include a lower transistor region on a substrate and an upper transistor region on the lower transistor region. The lower transistor region may include: a lower active region extending in a first horizontal direction; a plurality of lower source / drain regions contacting the lower active region; and a plurality of lower gate structures contacting the lower active region and The plurality of l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L27/06
CPCH01L27/0207H01L27/0688H01L21/8221H01L21/823871H01L27/092H01L27/0924H01L29/42392H01L29/78696H01L23/5286H01L27/0922H01L23/528H01L29/78618H01L29/0673
Inventor 都桢湖
Owner SAMSUNG ELECTRONICS CO LTD