Bonding apparatus and bonding method
A bonding device and bonding surface technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as reduced reliability and poor bonding
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no. 1 Embodiment approach
[0025] figure 1 It is a schematic diagram which shows an example of the structure of the bonding apparatus of 1st Embodiment. The bonding apparatus 1 is an apparatus for bonding the semiconductor wafer W1 and the semiconductor wafer W2 to form an integrated semiconductor wafer. The bonding apparatus 1 is used, for example, to fabricate an SOI (Silicon On Insulator, silicon-on-insulator) substrate, or to bond wirings of the semiconductor wafers W1 and W2 to each other.
[0026] The bonding device 1 includes a main body 10 and a control device 20 . The main body 10 includes holders 11, 12, ring stages ST1, ST2, and heaters HT1, HT2. The holder 11 is capable of holding the semiconductor wafer W1 by a vacuum chuck or an electrostatic chuck. The holder 12 is capable of holding the semiconductor wafer W2 by a vacuum chuck or an electrostatic chuck. Hereinafter, in this embodiment, the holders 11 and 12 suck the semiconductor wafers W1 and W2 by vacuum chucks. However, the holde...
no. 2 Embodiment approach
[0074] Figure 8 It is a schematic diagram which shows an example of the structure of the bonding apparatus of 2nd Embodiment. In the second embodiment, the inner peripheral portions of the ring members RNG1 and RNG2 are configured in a tray shape and have recesses (spot facing). The outer edge portions of the semiconductor wafers W1, W2 are mounted on the recesses of the ring members RNG1, RNG2, respectively. In addition, the central portions of the semiconductor wafers W1, W2 are vacuum-adsorbed by the holders 11, 12, respectively. The ring member RNG2 is vacuum-adsorbed to the ring stage ST2.
[0075] Since the ring members RNG1 and RNG2 merely mount the semiconductor wafers W1 and W2 on the pockets, they may be made of materials that do not thermally expand or contract, such as metal and ceramics.
[0076] The ring members RNG1 , RNG2 mount the semiconductor wafers W1 , W2 , but do not bond them. Accordingly, the holder 12 vacuum-suctions the semiconductor wafer W2, and ...
example 1
[0103] Figure 13A It is a perspective view showing the structure of the ring member RNG1 of the first modification. Figure 13B It is a perspective view showing the structure of the ring member RNG2 of the first modification.
[0104] Figure 13A The illustrated ring member RNG1 is provided with an opening OPr1 in the inner ring portion 102 instead of a notch. Other configurations of the ring member RNG1 of Variation 1 can be combined with Figure 12 The ring part RNG1 is the same.
[0105] Opening OPr1 is configured with Figure 12 Similarly, the notch C1 is provided at a position overlapping with the opening OP2 of the holder 11 so as not to hinder the suction of the semiconductor wafer W1 by the opening OP2.
[0106] Figure 13B The illustrated ring member RNG2 includes a support portion 103 on an inner ring portion 102 . The support portion 103 is connected to the inner ring portion 102 and is disposed on the inner side of the inner ring portion 102 in a substantia...
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