Unlock instant, AI-driven research and patent intelligence for your innovation.

FinFET and method for manufacturing same

A finfet and spacer technology, applied in the field of FinFET and its manufacturing, can solve the problems that planar transistors cannot achieve their goals, etc.

Pending Publication Date: 2021-11-05
TAIWAN SEMICON MFG CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional planar transistors cannot achieve such a goal due to their physical limitations

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • FinFET and method for manufacturing same
  • FinFET and method for manufacturing same
  • FinFET and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which the first component and the second component may be formed in direct contact. An embodiment in which an additional part is formed so that the first part and the second part may not be in direct contact. In addition, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relations...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
heightaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A method for manufacturing a FinFET, and FinFETs are provided. In various embodiments, the method for manufacturing a FinFET includes forming a fin structure over a substrate. Next, a dummy gate is deposited across over the fin structure. The method continues with forming a pair of first spacers on sidewalls of the dummy gate. Then, a source / drain region is formed in the fin structure not covered by the dummy gate. The method further includes removing the dummy gate to expose the fin structure. After that, the first spacers are truncated, and a gate stack is formed to cover the exposed fin structure and top surfaces of the first spacers. The invention relates to a FinFET and a method for manufacturing the same.

Description

[0001] This application is a divisional application of the invention patent application named "FinFET and its manufacturing method" with application number 201510171943.5 filed on April 13, 2015. technical field [0002] The present invention relates to FinFETs and methods of manufacturing the same. Background technique [0003] The semiconductor industry has experienced exponential growth and has progressed in pursuit of higher device density and performance and lower cost. However, conventional planar transistors cannot achieve such a goal due to their physical limitations. Accordingly, various non-planar transistors such as Fin Field Effect Transistors (FinFETs) have been developed. [0004] A FinFET includes a source, a drain, one or more semiconductor fin structures located between the source and the drain, and a gate stack spanning the semiconductor fin structures. The fabrication of FinFETs has focused on scaling down the size of FETs to increase the packaging densi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8234H01L27/088
CPCH01L29/66545H01L29/66795H01L29/785H01L29/6656H01L29/6653H01L29/7851H01L29/6681H01L21/2855H01L21/28556
Inventor 李威养陈定业
Owner TAIWAN SEMICON MFG CO LTD