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Application of putrescine in relieving inhibition of low-nitrogen stress on plant growth

A growth inhibition and nitrogen stress technology is applied in the application field of putrescine in alleviating the inhibition of plant growth caused by low nitrogen stress. Enhanced effect

Pending Publication Date: 2022-08-05
NORTHWEST A & F UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, there is no report on the effects of exogenous polyamines on plant growth under low nitrogen stress

Method used

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  • Application of putrescine in relieving inhibition of low-nitrogen stress on plant growth
  • Application of putrescine in relieving inhibition of low-nitrogen stress on plant growth
  • Application of putrescine in relieving inhibition of low-nitrogen stress on plant growth

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Embodiment Construction

[0027] In order to make the purpose, technical solutions and advantages of the invention more clear and clear, the following combined with the attachment and embodiments to further explain the present invention in detail. It should be understood that the specific embodiments described here are only used to explain the invention and do not limit the present invention.

[0028] Based on the embodiments in the present invention, all other embodiments obtained by ordinary technical personnel in the art under the premise of not creative labor belong to the protection of the present invention.

[0029] The experimental methods described in the following embodiments are conventional methods if there is no special description; reagents and materials, if there are no special explanations, can be purchased in the market.

[0030] 1. Configuration of reagents

[0031] (1) 1 / 2 Hoagland Nutrition solution, from 0.410g / L CA (N0 3 Cure 2 · 4H 2 O, 0.253g / L KNO 3 , 0.247g / L MGSO 4 · 7H 2 O, 0.068...

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Abstract

The invention provides application of putrescine in relieving inhibition of low-nitrogen stress on plant growth. The putrescine treatment relieves the inhibition of low nitrogen on plant growth, which is expressed in that the stem diameter, the root length and the leaf number of the plant are obviously increased. Meanwhile, the chlorophyll content and the maximum photochemical efficiency Fv / Fm value of the plants are remarkably increased through exogenous putrescine treatment, and the net photosynthetic rate and the nitrogen content are increased. Therefore, the putrescine with proper concentration can obviously relieve the inhibition effect of low-nitrogen stress on the growth of apple plants, and a foundation is laid for deeply researching the functional mechanism of the putrescine in response to low nitrogen in apples. Meanwhile, the achievement can be applied to guidance of production practice and improvement of the fruit tree rhizosphere environment in the future.

Description

Technical field [0001] The invention involves the field of fruit tree cultivation technology, which specifically involves the application of a rotamine to relieve low -nitrogen coercion and suppression of plant growth. Background technique [0002] Nitrogen is one of the indispensable nutritional elements in plant growth and development, and it is also the main limit factors for plant growth. Appropriate amount of nitrogen fertilizer can meet the growth needs of plant growth, improve the nutritional conditions in the plant, and promote plant growth. However, the effective utilization rate of plants accounts for only 30 % of nitrogen fertilizer. Excessive ordered nitrogen will enter the surrounding soil and water. Not only will it produce a series of environmental problems, but also increase the cost of agricultural production. Use, indirectly cause nitrogen lack of nutrition. Therefore, improving plants' ability to use nitrogen can have a profound impact on the sustainable develo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): A01N33/04A01P21/00A01G7/06
CPCA01N33/04A01G7/06Y02P60/21A01N33/02A01P21/00
Inventor 龚小庆程思媛马锋旺李超刘长海毛柯
Owner NORTHWEST A & F UNIV
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