Method of forming junction isolation active assembly

Abstract

The invention provides a shaping method of the junction insulation active blocks. The fundus of the semiconductor has several preconcerted active regions and there is at least one preconcerted isolation region between the two active regions. It forms the first grid structure on part of the fundus of the active regions as well as the second grid structure on the fundus of the isolation regions, engenders the first ion adulterating region in the funduses of the two sides of the first and second grid structures, forms the antireflection coatings on the fundus and the first and second grid structures, gets rid of part of the antireflection coating to reveal the second grid structure, then get rid of the second grid structure to reveal the fundus, forms the second ion adulterating region in the fundus of the isolation area and gets rid of the antireflection coatings.

Description

technical field [0001] The invention relates to semiconductor integrated circuit technology, in particular to a method for forming a junction-insulated active component. Background technique [0002] In an integrated circuit device, active components that are isolated from each other are included. Therefore, the component isolation process has become an important part of the semiconductor process. [0003] Shallow trench isolation (shallow trench isolation, STI) or deep trench isolation has been often used in device isolation processes. The manufacturing method first uses dry etching to remove part of the silicon substrate to form a trench, then uses a deposition method to fill the trench with dielectric materials, and then uses, for example, chemical mechanical polishing to planarize the contour of the trench surface. [0004] Since the trench process described above requires an etching process, a deposition-filling process, and a planarization process, there are many dis...

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