El display device and producing method thereof
An electroluminescence display and device technology, applied in the field of EL display devices and manufacturing thereof, can solve the problems of adverse effects on the light-emitting function of an organic light-emitting layer, complicated manufacturing processes, deterioration of device brightness and color purity, etc.
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[0036] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown.
[0037] Figure 3A to Figure 3C is a sectional view for explaining an EL display device and a method of manufacturing it according to an exemplary embodiment of the present invention.
[0038] refer to Figure 3A , providing a substrate 100 . A buffer layer 110 may be formed on the substrate 100 to prevent impurities from flowing out of the upper portion of the substrate 100 . The buffer layer 110 may be, for example, a silicon oxide layer, a silicon nitride layer, or a stack of silicon oxide and silicon nitride layers.
[0039] After forming the buffer layer 110, a polysilicon layer 125 may be formed on the buffer layer 110 by crystallizing amorphous silicon.
[0040] A gate insulating layer 120 may then be formed on the substrate 100 having the polysilicon layer 125 , and a gate electrode 135 may...
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