Material architecture for the fabrication of low temperature transistor

a technology of low temperature transistors and materials, applied in the direction of transistors, electric devices, solid-state devices, etc., to achieve the effect of reducing repetition

Inactive Publication Date: 2007-05-24
TAN CHUNG FOONG +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, during the anneal, damage from the ion implantation process, in the form of point defects, migrates laterally from the source and / or drain and into the semiconductor body and enhances dopant diffusion.
An additional challenge is the development of processing-compatible methods of controlling the diffusion of dopant atoms.

Method used

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  • Material architecture for the fabrication of low temperature transistor
  • Material architecture for the fabrication of low temperature transistor
  • Material architecture for the fabrication of low temperature transistor

Examples

Experimental program
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example embodiment

III. Overview—General Example Embodiment

[0073] Some example embodiments form a carbon-containing layer in the EOR regions of an implanted (e.g.,) doped region in a silicon containing substrate. The carbon-containing layer and the implanted region can be formed in any order. The carbon-containing layer helps reduce defects from the implant that formed the implanted or doped region.

[0074]FIGS. 1A-1 and 1A-2 show the formation of the doped (can be active or non-active ion) or implanted region 104 and the carbon-containing layer 112. These steps may be formed in any order.

[0075] Referring to FIG. 1A-1, a region 104 is formed by an implant process. FIG. 1A-1 shows the depth of the projected range (Rp) or (1*Rp) of the implant and 2times the depth of the projected range (2*Rp).

[0076]FIG. 1A-2 shows a carbon-containing layer 112 in a substrate. The carbon-containing layer 112 is preferably formed at in at least the EOR region of the implanted region. The EOR region is estimated to be at...

example embodiments

B. Example Embodiments

[0228] By means of the introduction of a layer of carbon rich region, some of the embodiments of the invention can eliminate the problem associated with problem 2—Removal of Defects.

[0229] Carbon species when present in the silicon lattice can act as sink for interstitials. By incorporating carbon into silicon, the carbon can reduce the presence of EOR defects. Also, the activation energy for carbon to perform as silicon sinks is in the range of 2.5 to 3 eV. This is about similar activation energy for the regrowth of amorphization layers. Hence, there is an indication of possibility of the reduction in thermal budget. This would reduce the required annealing temperature condition, reducing the overall thermal budget of the MOSFET device fabrication process.

[0230] Carbon which performs as silicon interstitial sinks, prevents the enhanced dopant diffusion (e.g., Phosphorus, Boron and Indium), whose mode of enhanced diffusion is dependent on the concentration of...

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Abstract

A structure and method for forming a carbon-containing layer in at least a portion of the end of range regions of implanted PAI and / or doped regions. The C-containing layer / region getters defects from the implanted PAI region or doped region. Example embodiments show a C-containing layer under at FET. Other example embodiments show an implanted C-containing regions implanted into the EOR region of implanted doped regions, such as pocket regions, S / D regions and SDE regions. Low temperature anneals can be used because the carbon-containing layer reduces defects.

Description

BACKGROUND OF INVENTION [0001] 1) Field of the Invention [0002] This invention relates generally to the structure and fabrication of a semiconductor device and more particularly to the fabrication of a carbon containing layer near doped regions in a transistor. [0003] 2) Description of the Prior Art [0004] Semiconductor devices such as field effect transistors (FETs) have a source region, and a drain region formed in a semiconductor substrate and a gate formed over the channel region. The source and drain are formed in a semiconductor substrate by introducing impurities (dopants) into the substrate. The semiconductor body separates the source region and the drain region. The dopants used to form the source and drain regions are of a different polarity (n-type or p-type) than the semiconductor substrate body surrounding the source and drain regions. Consequently, substantially no current will pass from the source to the semiconductor body or from the drain to the semiconductor body. ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L27/148H01L21/336H01L21/425
CPCH01L21/26506H01L21/26513H01L21/823807H01L21/823814H01L29/1054H01L29/1083H01L29/6659H01L21/2658
Inventor TAN, CHUNG FOONGLIU, JINPINGLEE, HYEOKJAETEE, KENG CHOKQUEK, ELGIN KIOK BOONE
Owner TAN CHUNG FOONG
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