Solid-state image sensing apparatus

a technology of image sensing and solid-state, which is applied in the direction of color television details, television system details, television systems, etc., can solve the problems of increasing cost, increasing power consumption, and difficult implementation, and achieves higher-speed output, noise, and unnecessary radiation.

Inactive Publication Date: 2012-10-25
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a solid-state image sensing device that solves problems of increased power consumption, noises, and unnecessary radiation while achieving higher-speed output. The device includes a pixel area, an AD-conversion part, a high-speed clock generation part, and a data-output part. The pixel area generates signal electric charge and outputs an analog pixel signal, which is converted into digital data by the AD-conversion part. The high-speed clock generation part generates a high-speed clock signal, which is used to drive the pixel area. The data-output part externally outputs the predetermined output data based on the converted digital data. The invention also provides a camera that includes a pixel area, an AD-conversion part, and an optical system for leading incident light into the pixel area, wherein the pixel area is driven in accordance with a first clock signal, and the digital signal from the AD-conversion part is output in accordance with a second clock signal having a higher frequency than that of the first clock signal.

Problems solved by technology

However, in that case, the number of output terminals becomes large, and thus various problems arise.
For example, the area of the solid-state image sensing apparatus becomes large (increases cost), the ICs in the next stage becomes large by the increase of input terminals, the implementation becomes difficult, miniaturization of the camera becomes difficult, the synchronization of so many output terminals is difficult, and the outputting at a high clock rate is difficult due to the difficulty of synchronization.
However, if the read-out speed is simply increased, problems, such as an increase in power consumption, noises, unnecessary radiation, might occur.

Method used

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Embodiment Construction

[0036]In the following, a detailed description will be given of embodiments of the present invention with reference to the drawings. In this regard, a description will be given, in the below, of the case where the present invention is applied to a CMOS image sensing device, which is an example of a solid-state image sensing apparatus of an X-Y addressing type. Also, a description will be given assuming that a CMOS image sensing device consists of all NMOS pixels.

[0037]Structure of Solid-State Image Sensing Apparatus

[0038]FIG. 1 is a schematic configuration diagram of a CMOS solid-state image sensing apparatus according to an embodiment of the present invention. Also, FIGS. 2A and 2B are explanatory diagrams illustrating examples of device disposition patterns of a clock-conversion part and an output circuit. Also, FIGS. 3A, 3B, and 3C are timing charts illustrating examples of data output methods.

[0039]A solid-state image sensing apparatus 1 is constituted so as to be applied to an ...

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Abstract

In a solid-state image sensing apparatus of an addressing method, a clock-conversion part generates a high-speed clock signal having a frequency two times or more the frequency of a low-speed clock signal. A signal processing part receives 10-bit pixel data through a horizontal signal line, performs predetermined signal processing, and passes parallel-format data to a switching part. The switching part selects each one bit of the parallel-format 10-bit data in a predetermined sequence to output from an output terminal using the high-speed clock signal from the clock-conversion part as a switching command, thus converts the parallel-format data into serial-format data, and passes it to an output buffer. The output buffer externally outputs differential output of normal video data and inverted video data individually from output terminals. Accordingly, the problems in power consumption, noises, and unnecessary radiation are solved, and higher-speed output is achieved.

Description

CROSS REFERENCES TO RELATED APPLICATIONS[0001]The subject matter of application Ser. No. 10 / 934,886, is incorporated herein by reference. The present application is a Continuation of U.S. Ser. No. 10 / 934,886, filed Sep. 3, 2004, which claims priority to Japanese Patent Application JP 2003-312498 filed in the Japanese Patent Office on Sep. 4, 2003, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a solid-state image sensing apparatus in which a plurality of unit pixels are arranged, and a signal from each unit pixel can be arbitrarily selected and read out by address control.[0004]2. Description of the Related Art[0005]In an amplified solid-state image sensing device (also called APS; active pixel sensor / gain cell), which is a kind of X-Y addressing-type solid-state image sensing device, pixels are composed using active devices having a MOS structure, etc. (MOS transistor...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H04N5/335H04N23/40H04N25/00
CPCH04N5/23241H04N3/155H04N25/70H04N25/76H04N25/7795H04N25/779H04N25/78H04N25/77H04N25/745H04N25/75
InventorMABUCHI, KEIJI
OwnerSONY CORP