Method of producing group iii nitride semiconductor growth substrate
a technology of nitride and growth substrate, which is applied in the direction of basic electric elements, electrical equipment, semiconductor devices, etc., can solve the problems of low thermal conductivity of sapphire substrate, inability to flow electric current, and inability to manufacture high-power output light-emitting diodes, etc., to achieve easy separation, reduce crystallinity, and easy separation
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Example 1
[0075]An AlN single crystal layer (thickness: 1 μm) was grown on sapphire using MOCVD to manufacture an AlN (0001) template substrate as a nitride semiconductor growth substrate. On the obtained AlN template substrate, Sc was deposited to a thickness shown in Table 1 by sputtering, and then the substrate was set in an MOCVD apparatus. A mixed gas of a nitrogen gas and an ammonia gas was flown at a flow rate in Table 1; heating was performed to a temperature (substrate surface temperature) in Table 1 under that atmosphere; and the temperature was kept at a pressure of 200 Torr for 10 minutes. Thus, a nitriding process was performed. After that, cooling was performed for 70 min to room temperature, and the substrate was taken out of the MOCVD apparatus; thus, five kinds of samples of 1-1 to 1-5 were obtained.
TABLE 1atmosphere, flow rateMetal layernitriding processwhole flowx-ray diffractionSamplemetalthicknesstemperaturepressuretimeNH3N2ratepeakNo.species(nm)(deg. C.)(Torr)(m...
example 2
[0082]As is the case with Example 1, a single metal layer of the metal species and thickness shown in Table 2 was formed on an AlN (0001) template substrate by sputtering. Thus formed samples were treated by a nitriding process under the conditions of Table 2 as in Example 1. Note that Sample 2-2 is a comparative example which was not nitrided, and was treated by heat treatment in a hydrogen gas. Following after that, a buffer layer made of an AlN material (1 μm) was further formed by MOCVD under the conditions shown in Table 2 to obtain Samples 2-1 to 2-3. The source gas of Al was TMA.
TABLE 2atmosphere, flow rateMetal layerprocess conditionswholebuffer layerSamplemetalthicknesstemperaturepressuretimeNH3N2H2flow ratetemperaturepressureV / IIINo.species(nm)(deg. C.)(Torr)(min)(%)(%)(%)(SLM)(deg. C.)(Torr)ratio2-1Sc101200200103070—3.5112510120Example2-220120020010——1003.5112512120ComparativeExample2-3Cr201200200101020703.5112512120ComparativeExample
(Evaluation)
[0083]An x-ray rocking cur...
example 3
[0091]As is the case with Example 1, a Sc metal layer was formed to a thickness shown in Table 5 on an AlN (0001) template substrate by sputtering, and thereafter a nitriding process was performed under the conditions shown in Table 5. With respect to thus formed samples, one or two layers of buffer layers made of an AlN material were formed under the conditions shown in Table 5 to obtain Samples 3-1 and 3-2. Note that film formation conditions other than the conditions shown in Table 5 were the same as those in the case of Example 2.
TABLE 5buffer layerssecond buffer layernitriding processfirst buffer layerheatingSamplemetalthicknesstemperaturepressuretimetemperaturepressuretimetimetemperaturetimeNo.species(nm)(deg. C.)(Torr)(min)(deg. C)(Torr)(min)(min)(deg. C.)(min)3-1Sc1012002001010401015117049Example3-21012002001011701050Example
(Evaluation)
[0092]FIG. 8 shows a sample surface image of Sample 3-1, obtained by AFM. Atomic steps was observed, which shows that an AlN layer which was ...
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