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Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer readable recording medium

a processing apparatus and semiconductor technology, applied in the direction of coatings, chemical vapor deposition coatings, electric discharge tubes, etc., can solve the problem of low productivity and achieve the effect of high productivity and characteristics

Active Publication Date: 2015-06-04
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention aims to provide a substrate processing apparatus and method of manufacturing a semiconductor device that can efficiently form high-quality films with good productivity.

Problems solved by technology

Also, the productivity is low since the number of processes to be performed is large in this case.

Method used

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  • Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer readable recording medium
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  • Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer readable recording medium

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Experimental program
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first embodiment

of the Present Invention

[0023]A substrate processing apparatus according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 3 below.

[0024](1) Structure of Substrate Processing Apparatus

[0025]FIG. 1 is a cross-sectional view of a substrate processing apparatus 100 according to the first embodiment.

[0026]The substrate processing apparatus 100 is an apparatus capable of forming a thin film and configured as a single-wafer type substrate processing apparatus as illustrated in FIG. 1.

[0027]As illustrated in FIG. 1, the substrate processing apparatus 100 includes a process container 202. The process container 202 is configured, for example, as a flat airtight container having a circular cross-section. Also, sidewalls or a lower wall of the process container 202 is formed of a metal material, e.g., aluminum (Al) or stainless steel (steel-use-stainless (SUS)). In the process container 202, a process chamber 201 configured to process a wafer 200, e....

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Abstract

A substrate processing apparatus capable of suppressing generation of by-products in a buffer space in even a single-wafer apparatus using the buffer space, and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a process chamber including a placement unit having a placing surface whereon a substrate is placed, a shower head including a buffer chamber and installed at upstream side of the process chamber, a gas supply system configured to alternately supply at least two types of gases into the process chamber via the buffer chamber of the shower head, and a heating unit configured to heat the buffer chamber to a first temperature and the process chamber to a second temperature which is higher than the first temperature while the at least two types of gases are supplied via the gas supply system.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATION[0001]This U.S. non-provisional patent application claims priority under 35 U.S.C. §119 of Japanese Patent Application No. 2013-248056 filed on Nov. 29, 2013 and Japanese Patent Application No. 2014-069339 filed on Mar. 28, 2014, in the Japanese Patent Office, the entire contents of which are hereby incorporated by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a substrate processing apparatus and a method of manufacturing a semiconductor device.[0004]2. Description of the Related Art[0005]Recently, there has been a tendency to manufacture semiconductor devices such as flash memories in a highly integrated manner. Thus, pattern sizes of semiconductor devices are becoming finer and finer. To form such a fine pattern, a predetermined treatment process, such as an oxidation process or a nitridation process, may be performed on a substrate as a process included in a semiconductor dev...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/46C23C16/455H01L21/02C23C16/458
CPCC23C16/46C23C16/4586H01L21/02263C23C16/45582C23C16/45523C23C16/45565C23C16/4408C23C16/4412C23C16/4557H01J37/32357H01J37/3244H01J37/32449H01J37/32522H01J37/32834H01J37/32853H01J37/32862H01L21/28512H01L21/76877
Inventor SAIDO, SHUHEI
Owner KOKUSA ELECTRIC CO LTD