System on chip and correction method of termination impedance element thereof

Abstract

A system on chip (SoC) and a correction method of termination impedance element thereof are provided. The SoC includes a pad, a first termination impedance element, and a correction circuit. The pad is coupled to an external dynamic random access memory (DRAM) chip, where the DRAM chip includes a corrected termination impedance element. The first termination impedance element is coupled to the pad. The correction circuit is coupled to a control terminal of the first termination impedance element, to control an impedance value of the first termination impedance element. During an initialization period, the correction circuit corrects the impedance value of the first termination impedance element by using the impedance value of the corrected termination impedance element.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the priority benefit of China application serial no. 201610867804.0, filed on Sep. 30, 2016. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.BACKGROUNDTechnical Field[0002]The present invention relates to an integrated circuit (IC), and more particularly, to a system on chip (SoC) and a correction method of termination impedance element thereof.Description of Related Art[0003]As integrate circuit technicians know, a variety of electrical circuits may be integrated / formed on a chip. For the purpose of communicating (e.g., exchanging data) with some other external circuits / chips by the chip (IC), the chip may be provided with a pad. The core circuit of the chip may output data signals to an external communication channel via the pad, and / or the core circuit of the chip may receive data signals transmitted through the external commu...

AI Technical Summary

Benefits of technology

[0005]The present invention is directed to provide a system on chip (SoC) and a correction method of a termination impedance element thereof, which is capable for saving the specialized external reference resistor for the SoC. By using a corrected termination impedance element inside a dynamic random access memory (DRAM), an impedance value of a first termination impedance element may be corrected by the SoC.

[0008]Based on the above, the SoC and the correction method of termination impedance element thereof provided in the embodiments of the present invention may correct the first termination impedance element inside the SoC by using the corrected termination impedance element inside the DRAM chip. Accordingly, the specialized external reference resistor for the SoC may be saved when correcting the first termination impedance element. Further, since the first termination impedance element of the SoC 100 is corrected by using the corrected termination impedance element inside the DRAM chip, the first termination impedance element of the SoC and the corrected termination impedance element of the DRAM chip depends more on each other and the impedances thereof are more match with each other.

Problems solved by technology

It's fairly known that, as a result of the fact that the external reference resistor is required for each chip (integrated circuit) on the PCB, not only the cost is increased, but the area of the PCB is also occupied thereby.

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