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MOS solid-state image pickup device and manufacturing method thereof

一种固态图像拾取、MOS晶体管的技术，应用在半导体/固态器件制造、电固体器件、半导体器件等方向，能够解决出现电流等问题，达到防止击穿电流的效果

Inactive Publication Date: 2008-01-16
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, there is a problem that a current occurs between the N-type well 3 and the N-type epitaxial layer 115 (hereinafter referred to as a punch-through current).

Method used

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  • MOS solid-state image pickup device and manufacturing method thereof
  • MOS solid-state image pickup device and manufacturing method thereof
  • MOS solid-state image pickup device and manufacturing method thereof

Examples

Experimental program
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no. 1 example

[0045] FIG. 1 shows a MOS solid-state image pickup device of a first embodiment of the present invention. Hereinafter, the MOS solid-state image pickup device of the first embodiment will be described with reference to FIG. 1 . The right side of FIG. 1 shows a pixel area and the left side of FIG. 1 shows a peripheral circuit area in which CMOS is formed and includes a PMOS formation area and an NMOS formation area. The CMOS is driven by a high voltage boosted by a boost circuit. Here, the pixel region is formed so as to have the same structure as the above-mentioned conventional MOS solid-state image pickup device (see FIG. 10 ), which can prevent crosstalk. Note that a pixel area usually includes a large number of pixels. However, in order to simplify the following description, it is assumed here that the pixel area includes only one pixel.

[0046] As shown in FIG. 1, the MOS solid-state image pickup device of the first embodiment includes an N-type semiconductor substrat...

no. 2 example

[0059] Fig. 6 shows a MOS solid-state image pickup device of the second embodiment. Hereinafter, the MOS solid-state image pickup device of this second embodiment will be described with reference to FIG. 6 . The MOS solid-state image pickup device of the second embodiment is different from the MOS solid-state image pickup device of the first embodiment in that the P-type well 2 is formed such that a part of the P-type well 2 is located in the N-type well instead of the P-type well 4 under 3. Hereinafter, description will be made regarding this difference. In FIG. 6, the same components as those of the MOS solid-state image pickup device of the first embodiment (see FIG. 1) are denoted by the same reference numerals used for the components of the first embodiment.

[0060] As shown in FIG. 6, the MOS solid-state image pickup device of the second embodiment includes an N-type semiconductor substrate 114, an N-type epitaxial layer 115, a P-type well 1, an N-type light receiving...

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PUM

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Abstract

An N-type epitaxial layer (115), which is formed above an N-type semiconductor substrate (114) in each of a pixel region and a peripheral circuit region; a first P-type well (1) formed above the N-type epitaxial layer (115) in the pixel region; and light receiving regions (117), which are formed within the first P-type well (1) and each of which is a component of a photodiode, are included. The peripheral circuit region includes: second P-type wells (2), which are formed from a surface (200) of the peripheral circuit region to a desired depth and each of which is a component of an N-Channel MOS transistor; an N-type well (3) which is formed from the surface (200) of the peripheral circuit region to a desired depth and which is a component of a P-Channel MOS transistor; and a third P-type well (4) which is formed so as to have such a shape as to isolate the N-type well (3) from the N-type epitaxial layer (115) and which has a higher impurity concentration than that of the first P-type well (1).

Description

field of invention [0001] The present invention relates to a solid-state image pickup device, and in particular to a MOS solid-state image pickup device and a manufacturing method thereof. technical background [0002] A solid-state image pickup device having an amplifying MOS transistor (hereinafter, referred to as a MOS solid-state image pickup device) has a photodiode and a MOS transistor for each pixel, and amplifies a signal detected by the photodiode by using the MOS transistor. The quality of an image captured by a MOS solid-state image pickup device is similar to that of a solid-state image pickup device having a CCD (Charge Coupled Device) (hereinafter referred to as a CCD solid-state image pickup device). Furthermore, by having a CMOS circuit, a MOS solid-state image pickup device consumes less power than a CCD solid-state image pickup device. Furthermore, unlike CCD solid-state image pickup devices, MOS solid-state image pickup devices have an advantage that peri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/822
CPCH01L27/14609H01L27/1463H01L27/14689H01L27/146
Inventor 大塚惠美内田干也宫川良平
Owner PANASONIC CORP