Level shift circuit, level shift circuit driving method, and semiconductor circuit apparatus having level shift circuit
A level-shifting circuit and level-shifting technology, applied in the direction of logic circuit connection/interface layout, logic circuit, logic circuit coupling/interface using field effect transistors, etc., can solve problems such as increasing battery consumption
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Embodiment 1
[0055] Embodiment 1 is a level shifting circuit characterized in that the level shifting circuit is connected to at least two power sources and a ground power source and prevents the inverter section constituting the level shifting circuit from the breakdown current.
[0056] use figure 1 , figure 2 as well as image 3 , Embodiment 1 will be described.
[0057]
[0058] figure 1 The level shift circuit of Embodiment 1 is shown. The level shift circuit of Embodiment 1 includes: a level shift unit 19 , an inverter unit 20 , and an N-type MOS transistor 12 . Wherein, the level shift unit 19 includes: a P-type MOS transistor 2 connected to the high-potential power supply 1, an input terminal 3, an N-type MOS transistor 4 connected to the ground potential power supply 14, and a P-type MOS transistor connected to the low-potential power supply 5 6. N-type MOS transistor 7 connected to ground potential power supply 14 , P-type MOS transistor 8 connected to high potential pow...
Embodiment 2
[0105] Embodiment 2 involves adding a P-type MOS transistor between the P-type MOS transistor 2 and the N-type MOS transistor 4 of the level shifting circuit of the embodiment 1, and adding a P-type MOS transistor between the P-type MOS transistor 8 and the N-type MOS transistor. A level shift circuit of P-type MOS transistors is added between the transistors 9 . Use attached Figure 4 Example 2 will be described.
[0106]
[0107] Figure 4 The level shift circuit of Embodiment 2 is shown. The level shifting circuit of embodiment 2 comprises: in the level shifting part 19 of embodiment 1, added the level shifting part 21 of P-type MOS transistor 30 and P-type MOS transistor 31; 20 ; and an N-type MOS transistor 12 connected to the ground power supply 14 to supply the ground potential to the inverter unit 20 .
[0108] The level shifter 21 operates as a latch type circuit that latches a signal that swings between a potential and a ground potential corresponding to a low ...
Embodiment 3
[0136] Embodiment 3 relates to a semiconductor circuit device including an analog circuit, a logic circuit, and the level shift circuit of Embodiment 1 or 2 that receives a control signal from the logic circuit and outputs a signal to the analog circuit. Use attached Figure 5 Example 3 will be described.
[0137] Figure 5 A semiconductor circuit device 50 of Embodiment 3 is shown. The semiconductor circuit device 50 includes: a high-potential power supply terminal 40 that accepts a high-potential supply, an analog circuit 41, a level shift circuit 42, a signal transmission circuit 43, a logic circuit 44, a low-potential power supply terminal 45 that accepts a low-potential supply, and a receiving An input terminal 46 for inputting a signal, and an output terminal 47 for outputting an output signal.
[0138] Although the analog circuit 41 was used above, any circuit may be used as long as it can be driven by a high potential. In addition, although the logic circuit 44 was...
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