Surface processing method of p type gallium nitride

Abstract

The invention provides a surface treatment method of p-typed GaN, pertaining to the photoelectric technical field. The method comprises the following steps: a well cleaned p-typed GaN sample is placedinto a reaction chamber of a reactive ion etcher, and the reaction chamber is vacuumized to a pressure less than 8.0 multiplied by 10<-5> Torr, and the surface of the sample is treated by a fluorineplasma. The surface treatment method of the invention can remove the Mg-H bonds in p-typed GaN, eliminate the oxide layer, enhance the density of surface cavity of p-typed GaN, and reduce the effect of contact resistance; meanwhile, as a dry treatment method is adopted, the disadvantages of wet treatment method are avoided. The surface treatment method of the p-typed GaN of the invention effectively improves the electric properties of the p-typed GaN.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, and in particular provides a surface treatment method for p-type gallium nitride. Background technique [0002] GaN-based optoelectronic devices are playing an increasingly important role in the field of optoelectronics due to their short wavelength and high luminous efficiency. At the same time, GaN materials are also used in electronic devices, such as metal-semiconductor field effect transistors and high mobility transistors. More and more attention. However, the development of GaN-based materials also faces some difficulties, one of which is the problem of p-type doping. The Mg doped in P-type GaN combines with H to form a bond during the growth process, so it cannot play the role of acceptor. Thermal annealing can release the Mg-H bond, but usually only 1%-0.1% of Mg is activated after thermal annealing, so the concentration of Mg acceptors is not high; coupled with the high ioniza...

AI Technical Summary

Problems solved by technology

However, the development of GaN-based materials also faces some difficulties, one of which is the problem of p-type doping

The Mg doped in P-type GaN combines with H to form bonds during the growth process, so it cannot act as an acceptor

Thermal annealing can release the Mg-H bond, but usually only 1%-0.1% of Mg is activated after thermal annealing, so the concentration of Mg acceptors is not high; coupled with the high ionization energy of Mg, the actual The hole concentration in p-type GaN is low (10 17 cm -3 )

Low hole concentration and high work function make it difficult to form high-quality ohmic contacts, which seriously affects the conversion efficiency, heat dissipation and lifetime of GaN-based optoelectronic devices

And usually before making the p-type ohmic contact of GaN, surface treatment is carried out, such as using acids (HCl, aqua regia, HF) and sulfides ((NH 4 ) 2 S, Na 2 S) solution soaking, so as to achieve the effect of removing surface oxide, passivating the surface, and increasing the surface hole concentration. However, since the photoresist will dissolve in an alkaline environment, the method of treating p-type gallium nitride with a solution is practical. production applications will be very limited

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